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MJD44H11T4价格
参考价格：￥0.7000
型号：MJD44H11T4 品牌：STMicroelectronics 备注：这里有MJD44H11T4多少钱，2026年最近7天走势，今日出价，今日竞价，MJD44H11T4批发/采购报价，MJD44H11T4行情走势销售排行榜，MJD44H11T4报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD44H11T4 | SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S | MOTOROLA 摩托罗拉 |   | |
MJD44H11T4 | SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | |
MJD44H11T4 | Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
MJD44H11T4 | Complementary power transistors 文件：217.1 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | |
MJD44H11T4 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT） 描述：TRANS PWR NPN 8A 80V DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MJD44H11T4 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
MJD44H11T4 | Low voltage NPN power transistor | STMICROELECTRONICS 意法半导体 | | |
Complementary power transistors MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app | STMICROELECTRONICS 意法半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
互补功率晶体管 | STMICROELECTRONICS 意法半导体 | | ||
Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：114.33 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors D2PAK for Surface Mount Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Satu | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors D2PAK for Surface Mount 文件：64.26 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Low voltage NPN power transistor 文件：412.51 Kbytes Page：11 Pages | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade low voltage NPN power transistor 文件：412.27 Kbytes Page：11 Pages | STMICROELECTRONICS 意法半导体 | | ||
Complementary Power Transistors D2PAK for Surface Mount 文件：64.26 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | |
MJD44H11T4产品属性
- 类型
描述
- 型号
MJD44H11T4
- 功能描述
两极晶体管 - BJT NPN Gen Pur Switch
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
17+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-252 |
|||
ON/安森美 |
21+ |
DPAK-3 |
20000 |
只做原装,质量保证 |
|||
ON |
25+ |
TO-252 |
6000 |
全新原装现货、诚信经营! |
|||
ON |
24+ |
TO-252 |
12000 |
原厂原装渠道刚到新货假一罚十 |
|||
ON |
2450+ |
TO-252 |
6541 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON/安森美 |
24+ |
DPAK-3 |
9600 |
原装现货,优势供应,支持实单! |
|||
ON |
最新 |
TO-252 |
6800 |
全新原装公司现货低价 |
|||
ONSEMI |
21+ |
TO-252 |
2863 |
十年信誉,只做原装,有挂就有现货! |
|||
ST/意法 |
25+ |
TO-252 |
32000 |
ST/意法全新特价MJD44H11T4即刻询购立享优惠#长期有货 |
|||
ON |
23+ |
DPAK |
56000 |
MJD44H11T4规格书下载地址
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2019-11-1
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