MJD44晶体管资料

  • MJD44H11别名:MJD44H11三极管、MJD44H11晶体管、MJD44H11晶体三极管

  • MJD44H11生产厂家:韩国三星公司

  • MJD44H11制作材料

  • MJD44H11性质:低频或音频放大 (LF)_功率放大 (PA)

  • MJD44H11封装形式:贴片封装

  • MJD44H11极限工作电压

  • MJD44H11最大电流允许值:8A

  • MJD44H11最大工作频率:<1MHZ或未知

  • MJD44H11引脚数:3

  • MJD44H11最大耗散功率:20W

  • MJD44H11放大倍数

  • MJD44H11图片代号:G-217

  • MJD44H11vtest:0

  • MJD44H11htest:999900

  • MJD44H11atest:8

  • MJD44H11wtest:20

  • MJD44H11代换 MJD44H11用什么型号代替

MJD44价格

参考价格:¥1.4349

型号:MJD44E3T4G 品牌:ONSemi 备注:这里有MJD44多少钱,2025年最近7天走势,今日出价,今日竞价,MJD44批发/采购报价,MJD44行情走势销售排行榜,MJD44报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD44

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

Darlington Power Transistor DPAK For Surface Mount Application . . . for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suf

Motorola

摩托罗拉

MJD44

COMPLEMENTARY SILICON PNP TRANSISTORS

MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

STMICROELECTRONICS

意法半导体

MJD44

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular MJE44H • Fast Switching Speeds

Fairchild

仙童半导体

MJD44

COMPLEMENTARY SILICON PNP TRANSISTORS

STMICROELECTRONICS

意法半导体

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

Darlington Power Transistor DPAK For Surface Mount Application . . . for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suf

Motorola

摩托罗拉

Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS

Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Electrically Similar to Popular D44E3 Device • High DC Gain − 100

ONSEMI

安森美半导体

NPN DARLINGTON PLASTIC POWER TRANSISTOR

NPN DARLINGTON PLASTIC POWER TRANSISTOR For General Purpose Power and Switching Output or Driver Stages in Applications such as Switching Regulators, Converters and Power Amplifiers

CDIL

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·High DC Current Gain : hFE = 1000(Min)@ IC= 5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed swi

ISC

无锡固电

Darlington Power Transistor DPAK For Surface Mount Applications

Designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features  Electrically Similar to Popular D44E3 Device  High DC Gain − 1000 Min @ 5.0 Adc  Low Sat. Voltage − 1.5 V @ 5.0 Adc  Compati

ONSEMI

安森美半导体

Darlington Power Transistor DPAK For Surface Mount Applications

Designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features  Electrically Similar to Popular D44E3 Device  High DC Gain − 1000 Min @ 5.0 Adc  Low Sat. Voltage − 1.5 V @ 5.0 Adc  Compati

ONSEMI

安森美半导体

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

Darlington Power Transistor DPAK For Surface Mount Application . . . for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suf

Motorola

摩托罗拉

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

Darlington Power Transistor DPAK For Surface Mount Application . . . for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suf

Motorola

摩托罗拉

Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS

Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Electrically Similar to Popular D44E3 Device • High DC Gain − 100

ONSEMI

安森美半导体

Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS

Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Electrically Similar to Popular D44E3 Device • High DC Gain − 100

ONSEMI

安森美半导体

Darlington Power Transistor DPAK For Surface Mount Applications

Designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features  Electrically Similar to Popular D44E3 Device  High DC Gain − 1000 Min @ 5.0 Adc  Low Sat. Voltage − 1.5 V @ 5.0 Adc  Compati

ONSEMI

安森美半导体

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

Motorola

摩托罗拉

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

ONSEMI

安森美半导体

COMPLEMENTARY SILICON PNP TRANSISTORS

MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

STMICROELECTRONICS

意法半导体

Complementary Power Transistors

Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb-Free Packages are Available

KEXIN

科信电子

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular MJE44H • Fast Switching Speeds

Fairchild

仙童半导体

Gate Driver

Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an

POWEREX

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

ONSEMI

安森美半导体

80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele

NEXPERIA

安世

isc Silicon NPN Power Transistors

DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl

ISC

无锡固电

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

ONSEMI

安森美半导体

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

ONSEMI

安森美半导体

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

Motorola

摩托罗拉

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

ONSEMI

安森美半导体

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

ONSEMI

安森美半导体

isc Silicon NPN Power Transistors

DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl

ISC

无锡固电

80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

NEXPERIA

安世

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

ONSEMI

安森美半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

ONSEMI

安森美半导体

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

ONSEMI

安森美半导体

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

ONSEMI

安森美半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

ONSEMI

安森美半导体

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

ONSEMI

安森美半导体

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

Motorola

摩托罗拉

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

ONSEMI

安森美半导体

Complementary power transistors

MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

STMICROELECTRONICS

意法半导体

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

ONSEMI

安森美半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

ONSEMI

安森美半导体

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

ONSEMI

安森美半导体

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

ONSEMI

安森美半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

ONSEMI

安森美半导体

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

ONSEMI

安森美半导体

Darlington Power Transistor

文件:129.12 Kbytes Page:3 Pages

ONSEMI

安森美半导体

Darlington Power Transistor

文件:129.12 Kbytes Page:3 Pages

ONSEMI

安森美半导体

Discrete and MOSFET components, analog & logic ICs

文件:11.62183 Mbytes Page:234 Pages

NEXPERIA

安世

Designed for general purpose power and switching

文件:302.13 Kbytes Page:2 Pages

RECTRON

丽正国际

COMPLEMENTARY SILICON PNP TRANSISTORS

文件:152.94 Kbytes Page:5 Pages

STMICROELECTRONICS

意法半导体

Complementary Power Transistors

文件:76.24 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Complementary power transistors

文件:217.1 Kbytes Page:8 Pages

STMICROELECTRONICS

意法半导体

Complementary Power Transistors

文件:114.33 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Power Transistors

文件:97.32 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Complementary Power Transistors SILICON POWER TRANSISTORS 8 AMPERES

文件:132.35 Kbytes Page:8 Pages

ONSEMI

安森美半导体

isc Silicon NPN Power Transistors

文件:262.95 Kbytes Page:3 Pages

ISC

无锡固电

Complementary power transistors

STMICROELECTRONICS

意法半导体

8 A,80 V,NPN 双极功率晶体管

ONSEMI

安森美半导体

COMPLEMENTARY SILICON PNP TRANSISTORS

文件:152.94 Kbytes Page:5 Pages

STMICROELECTRONICS

意法半导体

MJD44产品属性

  • 类型

    描述

  • 型号

    MJD44

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS

更新时间:2025-12-24 23:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TO-252-3
32350
深圳存库原装现货
ST(意法半导体)
24+
TO-252
2669
原厂订货渠道,支持BOM配单一站式服务
ST/意法
25+
TO-252
32000
ST/意法全新特价MJD44H11T4即刻询购立享优惠#长期有货
ON
25+
TO-252
6000
全新原装现货、诚信经营!
ON(安森美)
24+
TO-252-2(DPAK)
8765
只做原装现货假一罚十!价格最低!只卖原装现货
on
23+
TO252/DPAK
3500
原厂原装正品
ON
11+
TO-252
3630
全新原装公司现货
ST/意法
25+
TO-252-3
12500
只做进口原装假一罚百
ON
24+
SOT-252
12500
绝对原装现货,价格低,欢迎询购!
ONSEMI
25+
NA
12600
全新原装!优势库存热卖中!

MJD44数据表相关新闻