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MJD44晶体管资料

MJD44H11别名：MJD44H11三极管、MJD44H11晶体管、MJD44H11晶体三极管
MJD44H11生产厂家：韩国三星公司
MJD44H11制作材料：
MJD44H11性质：低频或音频放大（LF）_功率放大（PA）
MJD44H11封装形式：贴片封装
MJD44H11极限工作电压：
MJD44H11最大电流允许值：8A
MJD44H11最大工作频率：<1MHZ或未知
MJD44H11引脚数：3
MJD44H11最大耗散功率：20W
MJD44H11放大倍数：
MJD44H11图片代号：G-217
MJD44H11vtest：0
MJD44H11htest：999900
MJD44H11atest：8
MJD44H11wtest：20

MJD44H11代换 MJD44H11用什么型号代替：

MJD44价格

参考价格：￥1.4349

型号：MJD44E3T4G 品牌：ONSemi 备注：这里有MJD44多少钱，2025年最近7天走势，今日出价，今日竞价，MJD44批发/采购报价，MJD44行情走势销售排行榜，MJD44报价。

型号	功能描述	生产厂家&企业
MJD44	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS DarlingtonPowerTransistor DPAKForSurfaceMountApplication ...forgeneralpurposepowerandswitchingoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticSleeves(NoSuf	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MJD44	COMPLEMENTARY SILICON PNP TRANSISTORS MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD44	General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplications D-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularMJE44H •FastSwitchingSpeeds	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJD44E3	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS DarlingtonPowerTransistor DPAKForSurfaceMountApplication ...forgeneralpurposepowerandswitchingoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticSleeves(NoSuf	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MJD44E3	Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS DarlingtonPowerTransistor DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •ElectricallySimilartoPopularD44E3Device •HighDCGain−100	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44E3	NPN DARLINGTON PLASTIC POWER TRANSISTOR NPNDARLINGTONPLASTICPOWERTRANSISTOR ForGeneralPurposePowerandSwitchingOutputorDriverStagesinApplicationssuchas SwitchingRegulators,ConvertersandPowerAmplifiers	CDIL Continental Device India Limited
MJD44E3	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·HighDCCurrentGain :hFE=1000(Min)@IC=5A ·LowCollector-EmitterSaturationVoltage :VCE(sat)=1.5V(Max)@IC=5A ·MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS ·Designedforgeneral-purposeamplifierandlow-speed swi	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD44E3	Darlington Power Transistor DPAK For Surface Mount Applications Designedforgeneralpurposepowerandswitchingoutputordriver stagesinapplicationssuchasswitchingregulators,converters,and poweramplifiers. Features ElectricallySimilartoPopularD44E3Device HighDCGain−1000Min@5.0Adc LowSat.Voltage−1.5V@5.0Adc Compati	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44E3_V01	Darlington Power Transistor DPAK For Surface Mount Applications Designedforgeneralpurposepowerandswitchingoutputordriver stagesinapplicationssuchasswitchingregulators,converters,and poweramplifiers. Features ElectricallySimilartoPopularD44E3Device HighDCGain−1000Min@5.0Adc LowSat.Voltage−1.5V@5.0Adc Compati	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44E3-1	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS DarlingtonPowerTransistor DPAKForSurfaceMountApplication ...forgeneralpurposepowerandswitchingoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticSleeves(NoSuf	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MJD44E3T4	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS DarlingtonPowerTransistor DPAKForSurfaceMountApplication ...forgeneralpurposepowerandswitchingoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticSleeves(NoSuf	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MJD44E3T4	Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS DarlingtonPowerTransistor DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •ElectricallySimilartoPopularD44E3Device •HighDCGain−100	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44E3T4G	Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS DarlingtonPowerTransistor DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •ElectricallySimilartoPopularD44E3Device •HighDCGain−100	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44E3T4G	Darlington Power Transistor DPAK For Surface Mount Applications Designedforgeneralpurposepowerandswitchingoutputordriver stagesinapplicationssuchasswitchingregulators,converters,and poweramplifiers. Features ElectricallySimilartoPopularD44E3Device HighDCGain−1000Min@5.0Adc LowSat.Voltage−1.5V@5.0Adc Compati	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MJD44H11	SILICON POWER TRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11	COMPLEMENTARY SILICON PNP TRANSISTORS MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD44H11	General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplications D-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularMJE44H •FastSwitchingSpeeds	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJD44H11	Gate Driver Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan	POWEREX Powerex Power Semiconductors
MJD44H11	Complementary Power Transistors Features LeadFormedforSurfaceMountApplicationsinPlasticSleeves FastSwitchingSpeeds ComplementaryPairsSimplifiesDesigns Pb-FreePackagesareAvailable	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
MJD44H11	Complementary Power Transistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11	80 V, 8 A NPN high power bipolar transistor 1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD45H11 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Ele	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司
MJD44H11	isc Silicon NPN Power Transistors DESCRIPTION ·LowCollector-EmitterSaturationVoltage :VCE(sat)=1.0V(Max)@IC=8A ·FastSwitchingSpeeds ·ComplementtoTypeMJD45H11 ·DPAKforSurfaceMountApplications APPLICATIONS ·Designedforgeneralpurposepoweramplificationand switchingsuchasoutputordriverstagesinappl	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD44H11_V01	Complementary Power Transistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11-001	SILICON POWER TRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11-1	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MJD44H11-1G	Complementary Power Transistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11-1G	Complementary Power Transistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11-252	isc Silicon NPN Power Transistors DESCRIPTION ·LowCollector-EmitterSaturationVoltage :VCE(sat)=1.0V(Max)@IC=8A ·FastSwitchingSpeeds ·ComplementtoTypeMJD45H11 ·DPAKforSurfaceMountApplications APPLICATIONS ·Designedforgeneralpurposepoweramplificationand switchingsuchasoutputordriverstagesinappl	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD44H11A	80 V, 8 A NPN high power bipolar transistor 1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD45H11A 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •El	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司
MJD44H11G	SILICON POWER TRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11G	Complementary Power Transistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11G	Complementary Power Transistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11RL	SILICON POWER TRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11RLG	Complementary Power Transistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11RLG	Complementary Power Transistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11T4	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MJD44H11T4	SILICON POWER TRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11T4-A	Complementary power transistors MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD44H11T4G	SILICON POWER TRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11T4G	Complementary Power Transistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11T4G	Complementary Power Transistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11T5	SILICON POWER TRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11T5G	Complementary Power Transistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11T5G	Complementary Power Transistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44E3_12	Darlington Power Transistor 文件：129.12 Kbytes Page：3 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44E3T4G	Darlington Power Transistor 文件：129.12 Kbytes Page：3 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11	COMPLEMENTARY SILICON PNP TRANSISTORS 文件：152.94 Kbytes Page：5 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD44H11	Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11	Complementary power transistors 文件：217.1 Kbytes Page：8 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD44H11	Complementary Power Transistors 文件：114.33 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11	Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11	Complementary Power Transistors SILICON POWER TRANSISTORS 8 AMPERES 文件：132.35 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11	isc Silicon NPN Power Transistors 文件：262.95 Kbytes Page：3 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJD44H11	Designed for general purpose power and switching 文件：302.13 Kbytes Page：2 Pages	RECTRON Rectron Semiconductor
MJD44H11_03	COMPLEMENTARY SILICON PNP TRANSISTORS 文件：152.94 Kbytes Page：5 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD44H11_06	Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJD44H11_09	Complementary power transistors 文件：217.1 Kbytes Page：8 Pages	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团
MJD44H11_09	NPN Epitaxial Silicon Transistor 文件：118.83 Kbytes Page：5 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJD44H11_11	Complementary Power Transistors 文件：114.33 Kbytes Page：8 Pages	ONSEMION Semiconductor 安森美半导体安森美半导体公司

MJD44产品属性

类型
描述
型号
MJD44
制造商
ONSEMI
制造商全称
ON Semiconductor
功能描述
Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS

MJD44供应商更多...

更新时间：2025-7-25 10:28:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市昂芯微科技有限公司	MJD44H11T4G	ON/安森美	23+	TO-252	8160	原厂原装	询价
深圳市科恒伟业电子有限公司	MJD44H11T4G	ON	2450+	TO-252	6541	只做原装正品假一赔十为客户做到零风险!!	询价
标准国际(香港)有限公司	MJD44H11	MJD44H11		29159	29159		询价
深圳市华来深电子有限公司	MJD44H11T5G	ON	23+	TO-252	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市富达微科技有限公司	MJD44H11-1G	ON(安森美)	24+	标准封装	8000	原装，正品	询价
深圳市煦洪科技有限公司	MJD44H11T4	ST/意法半导体	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
深圳市金华微盛电子有限公司	MJD44E3T4	MOTOROLA	19+	TO252	17500		询价
深圳市中赛美电子科技有限公司	MJD44H11A	NEXPERIA/安世	SOT-428	21+	5000	中赛美只做原装没有任何中间商差价	询价
深圳市毅创腾电子科技有限公司	MJD44H11T4G	ON		TO-252	2000	正品原装--自家现货-实单可谈	询价
深圳市一线半导体有限公司	MJD44H11-T4		24+		5000	公司存货	询价

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2020-6-18
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深圳市拓亿芯电子正品销售mjd31ct4g
2019-11-1

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