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MJD42晶体管资料
MJD42C别名：MJD42C三极管、MJD42C晶体管、MJD42C晶体三极管
MJD42C生产厂家：韩国三星公司
MJD42C制作材料：
MJD42C性质：低频或音频放大 （LF）_功率放大 （PA）
MJD42C封装形式：贴片封装
MJD42C极限工作电压：
MJD42C最大电流允许值：6A
MJD42C最大工作频率：<1MHZ或未知
MJD42C引脚数：3
MJD42C最大耗散功率：20W
MJD42C放大倍数：
MJD42C图片代号：G-217
MJD42Cvtest：0
MJD42Chtest：999900
- MJD42Catest：6
MJD42Cwtest：20
MJD42C代换 MJD42C用什么型号代替：
MJD42价格
参考价格：￥1.5644
型号：MJD42CG 品牌：ON 备注：这里有MJD42多少钱，2026年最近7天走势，今日出价，今日竞价，MJD42批发/采购报价，MJD42行情走势销售排行榜，MJD42报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD42 | General Purpose Amplifier General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C | FAIRCHILD 仙童半导体 |   | |
丝印代码：MJD42CXXXX；TO-252-2L Plastic-Encapsulate Transistors FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simila | DGNJDZ 南晶电子 | | ||
丝印代码：MJD42C；100 V, 6 A PNP high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear | NEXPERIA 安世 | | ||
丝印代码：MJD42CA；100 V, 6 A PNP high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i | NEXPERIA 安世 | | ||
General Purpose Amplifier Low Speed Switching Applications General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C | FAIRCHILD 仙童半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect | ONSEMI 安森美半导体 | | ||
General Purpose Amplifier Low Speed Switching Applications General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C | FAIRCHILD 仙童半导体 | | ||
General Purpose Amplifier General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C | FAIRCHILD 仙童半导体 | | ||
Silicon PNP epitaxial planer Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically similar to popular TIP41 and | MCC | | ||
isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 30(Min)@ IC= -0.3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Complement to Type MJD41C • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. | TGS | | ||
TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. | FS | | ||
Silicon PNP transistor in a TO-252 Plastic Package. Descriptiona Silicon PNP transistor in a TO-252 Plastic Package. Features Complement to MJD41C. Applications Medium power linear switching applications. | FOSHAN 蓝箭电子 | | ||
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“ | JIANGSU 长电科技 | | ||
Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Monolithic Construction With Built?in Base ? Emitter Resistors ● Pb-Free Packages are Available | KEXIN 科信电子 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect | ONSEMI 安森美半导体 | | ||
100 V, 6 A PNP high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear | NEXPERIA 安世 | | ||
100 V, 6 A PNP high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i | NEXPERIA 安世 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect | ONSEMI 安森美半导体 | | ||
General Purpose Amplifier General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C | FAIRCHILD 仙童半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS 文件：198.47 Kbytes Page：6 Pages | MOTOROLA 摩托罗拉 | | ||
isc Silicon PNP Power Transistors 文件：360.27 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
晶体管 | JSCJ 长晶科技 | | ||
6.0 A，100 V，PNP 双极功率晶体管 | ONSEMI 安森美半导体 | | ||
PNP, 100V, 6A, TO252 | DIODES 美台半导体 | | ||
PNP Plastic-Encapsulate Transistors 文件：337.25 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
isc Silicon PNP Power Transistors 文件：360.27 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘 描述：TRANS PNP 100V 6A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
isc Silicon PNP Power Transistor 文件：295.89 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS PNP 100V 6A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
PNP Plastic-Encapsulate Transistors 文件：337.25 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | |
MJD42产品属性
- 类型
描述
- 型号
MJD42
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
General Purpose Amplifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-252 |
2176 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
23+ |
TO-252 |
12056 |
全新原装正品现货可开票 |
|||
CJ |
26+ |
TO252 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
NEXPERIA/安世 |
25+ |
SOT-428 |
860000 |
明嘉莱只做原装正品现货 |
|||
长电 |
24+ |
TO-252 |
383 |
||||
BLUE ROCKET(蓝箭) |
2447 |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
ONSEMI/安森美 |
25+ |
TO-252 |
45000 |
ONSEMI/安森美全新现货MJD42CG即刻询购立享优惠#长期有排单订 |
|||
ON |
23+ |
DPAK |
56000 |
||||
CJ原装长电 |
23+ |
TO-252 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
CJ原装长电 |
2021 |
TO-252/220 |
77200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
MJD42规格书下载地址
MJD42参数引脚图相关
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- MP4
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- mos晶体管
- mos管
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- molex连接器
- MJE1102
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- MJE1093
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- MJE105K
- MJE105
- MJE104
- MJE103
- MJE102
- MJE101
- MJD74C
- MJD6039(-1,T4)
- MJD6039
- MJD6036(-1,T4)
- MJD6036
- MJD5731
- MJD55H11
- MJD50TF
- MJD50T4
- MJD50G
- MJD50-1
- MJD50
- MJD49T4
- MJD47TF
- MJD47T4
- MJD47G
- MJD47-1
- MJD47
- MJD44H11
- MJD44E3
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- MJD350G
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- MJD32T4
- MJD32RL
- MJD32CQ
- MJD32CG
- MJD32C1
- MJD32C
- MJD32B
- MJD32
- MJD31T4
- MJD31CQ
- MJD31CG
- MJD31C1
- MJD31C
- MJD31B
- MJD31
- MJD30C
- MJD3055
- MJD30
- MJD29C
- MJD2955
- MJD29
- MJD127(-1,T4)
- MJD127
- MJD122(-1,T4)
- MJD122
- MJD117(-1,T4)
- MJD117
- MJD112(-1,T4)
- MJD112
- MJ921
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2019-11-1
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