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MJD42晶体管资料
MJD42C别名：MJD42C三极管、MJD42C晶体管、MJD42C晶体三极管
MJD42C生产厂家：韩国三星公司
MJD42C制作材料：
MJD42C性质：低频或音频放大 （LF）_功率放大 （PA）
MJD42C封装形式：贴片封装
MJD42C极限工作电压：
MJD42C最大电流允许值：6A
MJD42C最大工作频率：<1MHZ或未知
MJD42C引脚数：3
MJD42C最大耗散功率：20W
MJD42C放大倍数：
MJD42C图片代号：G-217
MJD42Cvtest：0
MJD42Chtest：999900
- MJD42Catest：6
MJD42Cwtest：20
MJD42C代换 MJD42C用什么型号代替：
MJD42价格
参考价格：￥1.5644
型号：MJD42CG 品牌：ON 备注：这里有MJD42多少钱，2025年最近7天走势，今日出价，今日竞价，MJD42批发/采购报价，MJD42行情走势销售排行榜，MJD42报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD42 | General Purpose Amplifier GeneralPurposeAmplifierLowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP42C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
General Purpose Amplifier Low Speed Switching Applications GeneralPurposeAmplifierLowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP42C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKforSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“1”Suffix) •Elect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
General Purpose Amplifier GeneralPurposeAmplifierLowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP42C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
General Purpose Amplifier Low Speed Switching Applications GeneralPurposeAmplifierLowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP42C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Complementary Power Transistors Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●MonolithicConstructionWithBuilt?inBase?EmitterResistors ●Pb-FreePackagesareAvailable | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | | |
TRANSISTOR (PNP) TRANSISTOR(PNP) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications. | FS First Silicon Co., Ltd |  | | |
100 V, 6 A PNP high power bipolar transistor Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD42series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds Applications •Powermanagement •Loadswitch •Linear | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
TO-252-2L Plastic-Encapsulate Transistors FEATURES DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications. LeadFormedforSurfaceMountApplicationsinPlastic Sleeves(NoSuffix) StraightLeadVersioninPlasticSleeves(“–1”Suffix) LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ElectricallySimila | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-1.5V(Max)@IC=-6A ·ComplementtoTypeMJD41C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-1.5V(Max)@IC=-6A ·ComplementtoTypeMJD41C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon PNP epitaxial planer Transistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHS Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •ElectricallysimilartopopularTIP41and | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | | |
isc Silicon PNP Power Transistors DESCRIPTION •DCCurrentGain-hFE=30(Min)@IC=-0.3A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=-100V(Min) •ComplementtoTypeMJD41C •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon PNP transistor in a TO-252 Plastic Package. Descriptiona SiliconPNPtransistorinaTO-252PlasticPackage. Features ComplementtoMJD41C. Applications Mediumpowerlinearswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications. ●LeadFormedforSurfaceMountApplicationsinPlastic Sleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“ | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | | |
Complementary Silicon Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd |  | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKforSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“1”Suffix) •Elect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-1.5V(Max)@IC=-6A ·ComplementtoTypeMJD41C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-1.5V(Max)@IC=-6A ·ComplementtoTypeMJD41C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKforSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“1”Suffix) •Elect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
100 V, 6 A PNP high power bipolar transistor Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD42series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds Applications •Powermanagement •Loadswitch •Linear | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
100 V, 6 A PNP high power bipolar transistor Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD42series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •QualifiedaccordingtoAEC-Q101andrecommendedforusei | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
100 V, 6 A PNP high power bipolar transistor Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD42series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •QualifiedaccordingtoAEC-Q101andrecommendedforusei | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKforSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“1”Suffix) •Elect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors ComplementaryPowerTransistorsDPAKforSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“1”Suffix) •Elect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General Purpose Amplifier GeneralPurposeAmplifierLowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP42C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PNP Plastic-Encapsulate Transistors 文件：337.25 Kbytes Page：2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | | |
isc Silicon PNP Power Transistors 文件：360.27 Kbytes Page：3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS 文件：198.47 Kbytes Page：6 Pages | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
isc Silicon PNP Power Transistors 文件：360.27 Kbytes Page：3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘 描述：TRANS PNP 100V 6A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS PNP 100V 6A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
isc Silicon PNP Power Transistor 文件：295.89 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PNP Plastic-Encapsulate Transistors 文件：337.25 Kbytes Page：2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | | |
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJD42产品属性
- 类型
描述
- 型号
MJD42
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
General Purpose Amplifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
1265 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
||||
ONSEMI/安森美 |
25+ |
TO-252 |
45000 |
ONSEMI/安森美全新现货MJD42CG即刻询购立享优惠#长期有排单订 |
|||
NK/南科功率 |
TO-252 |
2255 |
国产南科平替供应大量 |
||||
CJ |
23+ |
TO-252 |
30000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
24+ |
TO-252 |
5000 |
只做原厂渠道 可追溯货源 |
|||
CJ |
20+ |
TO-252 |
30000 |
全新原装公司现货
|
|||
ON/安森美 |
23+ |
TO-252 |
18656 |
||||
BLUE ROCKET(蓝箭) |
2447 |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
CJ/长电/长晶 |
23+ |
TO-252/220 |
67200 |
正规渠道,只有原装! |
|||
CJ原装长电 |
23+ |
TO-252 |
12800 |
公司只有原装 欢迎来电咨询。 |
MJD42芯片相关品牌
MJD42规格书下载地址
MJD42参数引脚图相关
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- MJD127(-1,T4)
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- MJD122(-1,T4)
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- MJD117(-1,T4)
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- MJD112(-1,T4)
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- MJ921
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MJD32CT4G，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
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2019-11-1
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