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MJD42晶体管资料

MJD42C别名：MJD42C三极管、MJD42C晶体管、MJD42C晶体三极管
MJD42C生产厂家：韩国三星公司
MJD42C制作材料：
MJD42C性质：低频或音频放大（LF）_功率放大（PA）
MJD42C封装形式：贴片封装
MJD42C极限工作电压：
MJD42C最大电流允许值：6A
MJD42C最大工作频率：<1MHZ或未知
MJD42C引脚数：3
MJD42C最大耗散功率：20W
MJD42C放大倍数：
MJD42C图片代号：G-217
MJD42Cvtest：0
MJD42Chtest：999900
MJD42Catest：6
MJD42Cwtest：20

MJD42C代换 MJD42C用什么型号代替：

MJD42价格

参考价格：￥1.5644

型号：MJD42CG 品牌：ON 备注：这里有MJD42多少钱，2026年最近7天走势，今日出价，今日竞价，MJD42批发/采购报价，MJD42行情走势销售排行榜，MJD42报价。

型号	功能描述	生产厂家企业	LOGO
MJD42	General Purpose Amplifier General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C	FAIRCHILD 仙童半导体	FAIRCHILD
MJD42_MJD42C	General Purpose Amplifier Low Speed Switching Applications General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C	FAIRCHILD 仙童半导体	FAIRCHILD
MJD42C	Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect	ONSEMI 安森美半导体	ONSEMI
MJD42C	General Purpose Amplifier General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C	FAIRCHILD 仙童半导体	FAIRCHILD
MJD42C	General Purpose Amplifier Low Speed Switching Applications General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C	FAIRCHILD 仙童半导体	FAIRCHILD
MJD42C	Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Monolithic Construction With Built?in Base ? Emitter Resistors ● Pb-Free Packages are Available	KEXIN 科信电子	KEXIN
MJD42C	TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications.	FS	FS
MJD42C	100 V, 6 A PNP high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear	NEXPERIA 安世	NEXPERIA
MJD42C	TO-252-2L Plastic-Encapsulate Transistors FEATURES Designed for General Purpose Amplifier and Low Speed Switching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simila	DGNJDZ 南晶电子	DGNJDZ
MJD42C	Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications	ISC 无锡固电	ISC
MJD42C	Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications	ISC 无锡固电	ISC
MJD42C	TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“	JIANGSU 长电科技	JIANGSU
MJD42C	Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications.	TGS	TGS
MJD42C	Silicon PNP epitaxial planer Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically similar to popular TIP41 and	MCC	MCC
MJD42C	isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 30(Min)@ IC= -0.3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Complement to Type MJD41C • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS	ISC 无锡固电	ISC
MJD42C	Silicon PNP transistor in a TO-252 Plastic Package. Descriptiona Silicon PNP transistor in a TO-252 Plastic Package. Features Complement to MJD41C. Applications Medium power linear switching applications.	FOSHAN 蓝箭电子	FOSHAN
MJD42C1G	Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect	ONSEMI 安森美半导体	ONSEMI
MJD42C-251	Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications	ISC 无锡固电	ISC
MJD42C-252	Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -1.5V(Max) @IC= -6A ·Complement to Type MJD41C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications	ISC 无锡固电	ISC
MJD42CG	Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect	ONSEMI 安森美半导体	ONSEMI
MJD42CJ	100 V, 6 A PNP high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear	NEXPERIA 安世	NEXPERIA
MJD42C-Q	100 V, 6 A PNP high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i	NEXPERIA 安世	NEXPERIA
MJD42C-QJ	100 V, 6 A PNP high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD42 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i	NEXPERIA 安世	NEXPERIA
MJD42CRLG	Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect	ONSEMI 安森美半导体	ONSEMI
MJD42CT4G	Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect	ONSEMI 安森美半导体	ONSEMI
MJD42CTF	General Purpose Amplifier General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C	FAIRCHILD 仙童半导体	FAIRCHILD
MJD42C	晶体管	JSCJ 长晶科技	JSCJ
MJD42C	6.0 A，100 V，PNP 双极功率晶体管	ONSEMI 安森美半导体	ONSEMI
MJD42C	PNP, 100V, 6A, TO252	DIODES 美台半导体	DIODES
MJD42C	PNP Plastic-Encapsulate Transistors 文件：337.25 Kbytes Page：2 Pages	SECOS 喜可士	SECOS
MJD42C	Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42C	isc Silicon PNP Power Transistors 文件：360.27 Kbytes Page：3 Pages	ISC 无锡固电	ISC
MJD42C	Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42C	SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS 文件：198.47 Kbytes Page：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MJD42C	Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42C_17	isc Silicon PNP Power Transistors 文件：360.27 Kbytes Page：3 Pages	ISC 无锡固电	ISC
MJD42C1	Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42C1	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘描述：TRANS PNP 100V 6A IPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJD42C1G	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件描述：TRANS PNP 100V 6A IPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJD42C1G	Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42C1G	Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42C1G	Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42C1G	isc Silicon PNP Power Transistor 文件：295.89 Kbytes Page：2 Pages	ISC 无锡固电	ISC
MJD42C-C	PNP Plastic-Encapsulate Transistors 文件：337.25 Kbytes Page：2 Pages	SECOS 喜可士	SECOS
MJD42CG	Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42CG	Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42CG	Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42CRL	Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42CRLG	Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42CRLG	Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42CRLG	Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42CT4	Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42CT4G	Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42CT4G	Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD42CT4G	Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI

MJD42产品属性

类型
描述
型号
MJD42
制造商
FAIRCHILD
制造商全称
Fairchild Semiconductor
功能描述
General Purpose Amplifier

MJD42供应商更多...

更新时间：2026-1-28 10:17:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市芯球通科技有限公司	MJD42CT4G	ON(安森美)	23+	TO-252-2(DPAK)	13071	公司只做原装正品,假一赔十	询价
深圳市河锋鑫科技有限公司	MJD42	ST	TO-252	22+	6000	十年配单,只做原装	询价
深圳市讯顺达科技有限公司	MJD42C	CJ	20+	TO-252	30000	全新原装公司现货	询价
深圳市一线半导体有限公司	MJD42C	长电	24+	TO-252	383		询价
瀚佳科技(深圳)有限公司	MJD42C	长电	24+	TO-252	65300	一级代理/放心购买!	询价
深圳市芯连胜科技有限公司	MJD42C	CJ/长晶	2023	TO-252	37500		询价
海芯未来半导体电子（深圳）有限公司	MJD42CT4G	ON	24+	DPAK	14950		询价
深圳市芯泽盛世科技有限公司	MJD42C	CJ原装长电	25+	TO-252/220	8880	原装认准芯泽盛世！	询价
深圳市南科功率半导体有限公司	MJD42CT4G	NK/南科功率		TO-252	2255	国产南科平替供应大量	询价
深圳市华来深电子有限公司	MJD42C	ON	23+	TO-252	11846	一级代理商现货批发,原装正品,假一罚十	询价

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MJD42晶体管资料

MJD42价格

MJD42产品属性

MJD42供应商更多...

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MJD42规格书下载地址

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MJD32CT4G

MJD127T4 ON原厂授权经销商

mjd31ct4g亚太地区代理商，绝对优势！！

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