位置：首页 > IC中文资料第1002页 > MJD42C1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD42C1 | Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 |   | |
MJD42C1 | 封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘 描述：TRANS PNP 100V 6A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
isc Silicon PNP Power Transistor 文件：295.89 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS PNP 100V 6A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
High free-air power dissipation 30-80 VOLTS 3 AMP, 12.5 WATTS Features: • High free-air power dissipation • NPN complement to DC43C PNP • Low collector saturation voltage (0.5V typ. @ 3.0A IC) • Excellent linearity • Fast Switching | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN POWER TRANSISTORS [GE] 30-80 VOLTS 3 AMP, 12.5 WATTS Features: • High free-air power dissipation • NPN complement to DC43C PNP • Low collector saturation voltage (0.5V typ. @ 3.0A IC) • Excellent linearity • Fast Switching | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Plug-in Signal Conditioners K-UNIT 文件：134.48 Kbytes Page：4 Pages | MSYSTEM 爱模 | | ||
Plug-in Signal Conditioners K-UNIT 文件：134.48 Kbytes Page：4 Pages | MSYSTEM 爱模 | | ||
Power Transducer Series L-UNIT 文件：146.39 Kbytes Page：5 Pages | MSYSTEM 爱模 | |
MJD42C1产品属性
- 类型
描述
- 型号
MJD42C1
- 功能描述
两极晶体管 - BJT 6A 100V 20W PNP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
15000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
onsemi(安森美) |
24+ |
IPAK |
959 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMICON |
23+ |
NA |
8701 |
专做原装正品,假一罚百! |
|||
ON |
25+ |
DPAK2WSTRPBF |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
MOT |
25+23+ |
DPAK3 |
35820 |
绝对原装正品全新进口深圳现货 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
ON |
24+ |
DPAK3(SINGLEGAUGE |
8866 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
MOT |
24+ |
DPAK3 |
35200 |
一级代理分销/放心采购 |
|||
ON |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
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MJD42C1规格书下载地址
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DdatasheetPDF页码索引
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