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位置：首页 > IC中文资料第11947页 > MJ1102

MJ1102晶体管资料

  • MJ11020别名：MJ11020三极管、MJ11020晶体管、MJ11020晶体三极管

  • MJ11020生产厂家：美国摩托罗拉半导体公司

  • MJ11020制作材料：Si-N+Darl+Di

  • MJ11020性质：低频或音频放大 （LF）

  • MJ11020封装形式：直插封装

  • MJ11020极限工作电压：200V

  • MJ11020最大电流允许值：15A

  • MJ11020最大工作频率：<1MHZ或未知

  • MJ11020引脚数：2

  • MJ11020最大耗散功率：175W

  • MJ11020放大倍数：

  • MJ11020图片代号：E-44

  • MJ11020vtest：200

  • MJ11020htest：999900

  • MJ11020atest：15

  • MJ11020wtest：175

  • MJ11020代换 MJ11020用什么型号代替：

MJ1102价格

参考价格：￥27.1413

型号：MJ11021G 品牌：ONSemi 备注：这里有MJ1102多少钱，2025年最近7天走势，今日出价，今日竞价，MJ1102批发/采购报价，MJ1102行情走势销售排行榜，MJ1102报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJ11020

POWERTRANSISTORS(15A,150-250V,175W)

15AMPERECOMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTOR150-250VOLTS175WATTS MJ11017,MJ11019,MJ11021=>PNP MJ11018,MJ11020,MJ11022=>NPN

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC
MJ11020

NPNSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

永盛电子永盛电子(香港)有限公司

WINGS
MJ11021

30AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.120VOLTS200WATTS

ComplementaryDarlingtonSiliconPowerTransistors ...designedforuseasgeneralpurposeamplifiers,lowfrequencyswitchingandmotorcontrolapplications. •HighdcCurrentGain@10Adc—hFE=400Min(AllTypes) •Collector–EmitterSustainingVoltage VCEO(sus

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJ11021

POWERTRANSISTORS(15A,150-250V,175W)

15AMPERECOMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTOR150-250VOLTS175WATTS MJ11017,MJ11019,MJ11021=>PNP MJ11018,MJ11020,MJ11022=>NPN

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC
MJ11021

ComplementaryDarlingtonSiliconPowerTransistors

ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11021G

ComplementaryDarlingtonSiliconPowerTransistors

ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11021G

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-250V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):-3.4V(Max)@IC=-15A APPLICATIONS ·Lowcurrenthighspeedswitchingapplications ·Lowpoweraudioamplifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJ11022

ComplementaryDarlingtonSiliconPowerTransistors

ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11022

30AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.120VOLTS200WATTS

ComplementaryDarlingtonSiliconPowerTransistors ...designedforuseasgeneralpurposeamplifiers,lowfrequencyswitchingandmotorcontrolapplications. •HighdcCurrentGain@10Adc—hFE=400Min(AllTypes) •Collector–EmitterSustainingVoltage VCEO(sus

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJ11022

POWERTRANSISTORS(15A,150-250V,175W)

15AMPERECOMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTOR150-250VOLTS175WATTS MJ11017,MJ11019,MJ11021=>PNP MJ11018,MJ11020,MJ11022=>NPN

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC
MJ11022

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterSustainingVoltage- :VCEO(SUS)=250V(Min.) •HighDCCurrentGain- :hFE=400(Min.)@IC=10A •LowCollectorSaturationVoltage- :VCE(sat)=1.0V(Max.)@IC=5.0A APPLICATIONS •Designedforgeneralpurposeamplifiers,lowfrequency sw

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJ11022G

ComplementaryDarlingtonSiliconPowerTransistors

ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11028

High-CurrentComplementarySiliconPowerTransistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJ11028

COMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS

High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11028

POWERTRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC
MJ11028

COMPLEMENTARYDARLINGTONPOWERTRANSISTOR

FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

SEME-LAB
MJ11028

50AMPERECOMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS60.120VOLTS300WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) •

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJ11029

COMPLEMENTARYDARLINGTONPOWERTRANSISTOR

FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

SEME-LAB
MJ11029

50AMPERECOMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS60.120VOLTS300WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) •

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJ11029

COMPLEMENTARYSILICONDARLINGTONPOWERTRANSISTORS

High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11029

POWERTRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC
MJ11029

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage :V(BR)CEO=-60V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=-25A :hFE=400(Min.)@IC=-50A •ComplementtoTypeMJ11028 APPLICATIONS •Designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplic

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJ11029

High-CurrentComplementarySiliconPowerTransistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJ11020

iscSiliconNPNDarlingtonPowerTransistor

文件：81.1 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJ11021

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON

文件：235.08 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11021

ComplementaryDarlingtonSiliconPowerTransistors

文件：78.9 Kbytes Page：5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11021

ComplementaryDarlingtonSiliconPowerTransistors

文件：132.66 Kbytes Page：5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11021_05

ComplementaryDarlingtonSiliconPowerTransistors

文件：78.9 Kbytes Page：5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11021_08

ComplementaryDarlingtonSiliconPowerTransistors

文件：132.66 Kbytes Page：5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11021G

ComplementaryDarlingtonSiliconPowerTransistors

文件：78.9 Kbytes Page：5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11021G

ComplementaryDarlingtonSiliconPowerTransistors

文件：132.66 Kbytes Page：5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11021G

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS PNP DARL 250V 15A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11022

ComplementaryDarlingtonSiliconPowerTransistors

文件：132.66 Kbytes Page：5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11022

封装/外壳：TO-204AA，TO-3 包装：托盘 描述：TRANS NPN DARL 250V 15A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11022

ComplementaryDarlingtonSiliconPowerTransistors

文件：78.9 Kbytes Page：5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11022

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON

文件：235.08 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11022

NPNSILICONDARLINGTONTRANSISTOR(SWITCHINGREGULATORSPWMINVERTERSSOLENOIDANDRELAYDRIVERS)

文件：21.71 Kbytes Page：1 Pages

WINGSWing Shing Computer Components

永盛电子永盛电子(香港)有限公司

WINGS
MJ11022G

ComplementaryDarlingtonSiliconPowerTransistors

文件：78.9 Kbytes Page：5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11022G

ComplementaryDarlingtonSiliconPowerTransistors

文件：132.66 Kbytes Page：5 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11028

High-CurrentComplementarySiliconPowerTransistors

文件：121.71 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11028

iscSiliconNPNDarlingtonPowerTransistor

文件：51.56 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJ11028

High?묬urrentComplementarySiliconPowerTransistors

文件：68.44 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11028_05

High?묬urrentComplementarySiliconPowerTransistors

文件：68.44 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11028_08

High-CurrentComplementarySiliconPowerTransistors

文件：121.71 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11028G

High-CurrentComplementarySiliconPowerTransistors

文件：121.71 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11028G

High?묬urrentComplementarySiliconPowerTransistors

文件：68.44 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11029

High?묬urrentComplementarySiliconPowerTransistors

文件：68.44 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11029

High-CurrentComplementarySiliconPowerTransistors

文件：121.71 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11029G

High-CurrentComplementarySiliconPowerTransistors

文件：121.71 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJ11029G

High?묬urrentComplementarySiliconPowerTransistors

文件：68.44 Kbytes Page：4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
1102

Specifications

Electrical Impedance50Ohms FrequencyRangeDC~6GHz VoltageRating335VoltsPeak DielecticWithstandingVoltage1000VoltsRMS InsertionLoss.20dBMax. Mechanical MatingSnap-OnCoupling MatingTorque4.5pounds(20N)Max.Engagement2.3pounds(10N)Min.Disengagement CableAttach

L-COMInfinite Electronics International, Inc.

英飞畅苏州英飞畅贸易有限公司

L-COM
1102

CustomerSpecification

Construction Diameters(In) 1)Component14X1COND a)Conductor32(7/40)AWGTinnedCopper0.009 b)Insulation0.010Wall,Nom.PVC0.029 (1)ColorCodeAlphaWireColorCodeD CondColorCondColorCondColor 1BLACK3WHITE 2RED4GREEN 2)CableAssembly4ComponentsCabled a)Twi

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE
1102

CustomerSpecification

Construction Diameters(In) 1)Component14X1COND a)Conductor32(7/40)AWGTinnedCopper0.009 b)Insulation0.010Wall,Nom.PVC0.029 (1)ColorCodeAlphaWireColorCodeD CondColorCondColorCondColor 1BLACK3WHITE 2RED4GREEN 2)CableAssembly4ComponentsCabled a)Twi

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE
1102A

200V-1,000VSinglePhaseBridge

[VOLTAGEMULTIPLIERSINC.] 200V-1,000VSinglePhaseBridge 1.4A-1.5AForwardCurrent 70ns-3000nsRecoveryTime

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1
1102

PCMCIAMODEMTRANSFORMERS

文件：98.89 Kbytes Page：2 Pages

XFMRS

XFMRS，Inc.

XFMRS

MJ1102产品属性

  • 类型

    描述

  • 型号

    MJ1102

  • 制造商

    ISC

  • 制造商全称

    Inchange Semiconductor Company Limited

  • 功能描述

    isc Silicon NPN Darlington Power Transistor

MJ1102供应商更多...

更新时间：2025-7-28 13:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市昊创电子有限公司
MJ11022
MOT/ON
专业铁帽
TO-3
500
原装铁帽专营,代理渠道量大可订货
询价
深圳市弘为电子有限公司
MJ11022
MOT/ON
24+
TO-3
500
原装现货假一罚十
询价
深圳市华来深电子有限公司
MJ11022
MOTOROL
23+
TO-3
8560
受权代理!全新原装现货特价热卖!
询价
贸泽芯城（深圳）电子科技有限公司
MJ11022G
ON/安森美
23+
TO-3
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市纳立科技有限公司
MJ11022
三年内
1983
只做原装正品
询价
现代芯城（深圳）科技有限公司
MJ11022
24+
N/A
63000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市星辰微电科技有限公司
MJ11022G
ON
24+
TO-204-2
25000
ON全系列可订货
询价
深圳市威尔健半导体有限公司
MJ11022
ON/安森美
23+
TO-3
50000
全新原装正品现货,支持订货
询价
上海磐岳电子有限公司
MJ11022
MOT
2023+
TO-3
5800
进口原装,现货热卖
询价
深圳良洲科技有限公司
MJ11022G
onsemi
两年内
NA
6
实单价格可谈
询价

MJ1102芯片相关品牌

  • CDE
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  • COPAL
  • Cypress
  • freescale
  • ILSI
  • NKK
  • OPTOWAY
  • OTTO
  • Philips
  • WALSIN
  • WURTH

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