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MJ1102晶体管资料

MJ11020别名：MJ11020三极管、MJ11020晶体管、MJ11020晶体三极管
MJ11020生产厂家：美国摩托罗拉半导体公司
MJ11020制作材料：Si-N+Darl+Di
MJ11020性质：低频或音频放大（LF）
MJ11020封装形式：直插封装
MJ11020极限工作电压：200V
MJ11020最大电流允许值：15A
MJ11020最大工作频率：<1MHZ或未知
MJ11020引脚数：2
MJ11020最大耗散功率：175W
MJ11020放大倍数：
MJ11020图片代号：E-44
MJ11020vtest：200
MJ11020htest：999900
MJ11020atest：15
MJ11020wtest：175

MJ11020代换 MJ11020用什么型号代替：

MJ1102价格

参考价格：￥27.1413

型号：MJ11021G 品牌：ONSemi 备注：这里有MJ1102多少钱，2025年最近7天走势，今日出价，今日竞价，MJ1102批发/采购报价，MJ1102行情走势销售排行榜，MJ1102报价。

型号	功能描述	生产厂家企业	LOGO
MJ11020	POWER TRANSISTORS(15A,150-250V,175W) 15 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 150 - 250 VOLTS 175 WATTS MJ11017,MJ11019,MJ11021 => PNP MJ11018,MJ11020,MJ11022 => NPN	MOSPEC 统懋	MOSPEC
MJ11020	NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS	WINGS 永盛电子	WINGS
MJ11021	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus	Motorola 摩托罗拉	Motorola
MJ11021	POWER TRANSISTORS(15A,150-250V,175W) 15 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 150 - 250 VOLTS 175 WATTS MJ11017,MJ11019,MJ11021 => PNP MJ11018,MJ11020,MJ11022 => NPN	MOSPEC 统懋	MOSPEC
MJ11021	Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)	ONSEMI 安森美半导体	ONSEMI
MJ11021G	Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)	ONSEMI 安森美半导体	ONSEMI
MJ11021G	Silicon PNP Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO=-250V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):-3.4V(Max) @IC=-15A APPLICATIONS · Low current high speed switching applications · Low power audio amplifier	ISC 无锡固电	ISC
MJ11022	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V (Min.) • High DC Current Gain- : hFE= 400(Min.)@IC= 10A • Low Collector Saturation Voltage- : VCE (sat)= 1.0V(Max.)@ IC= 5.0A APPLICATIONS • Designed for general purpose amplifiers, low frequency sw	ISC 无锡固电	ISC
MJ11022	Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)	ONSEMI 安森美半导体	ONSEMI
MJ11022	POWER TRANSISTORS(15A,150-250V,175W) 15 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 150 - 250 VOLTS 175 WATTS MJ11017,MJ11019,MJ11021 => PNP MJ11018,MJ11020,MJ11022 => NPN	MOSPEC 统懋	MOSPEC
MJ11022	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus	Motorola 摩托罗拉	Motorola
MJ11022G	Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)	ONSEMI 安森美半导体	ONSEMI
MJ11028	POWER TRANSISTOR(50A,60-120V,300W) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi	MOSPEC 统懋	MOSPEC
MJ11028	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A	ONSEMI 安森美半导体	ONSEMI
MJ11028	50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •	Motorola 摩托罗拉	Motorola
MJ11028	High-Current Complementary Silicon Power Transistors High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJ11028	COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de	SEME-LAB	SEME-LAB
MJ11029	COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de	SEME-LAB	SEME-LAB
MJ11029	High-Current Complementary Silicon Power Transistors High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJ11029	isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A • Complement to Type MJ11028 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier applic	ISC 无锡固电	ISC
MJ11029	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A	ONSEMI 安森美半导体	ONSEMI
MJ11029	50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •	Motorola 摩托罗拉	Motorola
MJ11029	POWER TRANSISTOR(50A,60-120V,300W) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi	MOSPEC 统懋	MOSPEC
MJ11020	isc Silicon NPN Darlington Power Transistor 文件：81.1 Kbytes Page：2 Pages	ISC 无锡固电	ISC
MJ11021	175W NPN Darlington BJT Transistor	DIGITRON	DIGITRON
MJ11021	Trans Darlington PNP 250V 15A 3-Pin(2+Tab) TO-204 Tray	ETC 知名厂家	ETC
MJ11021	Complementary Darlington Silicon Power Transistors 文件：132.66 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11021	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 文件：235.08 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11021	Complementary Darlington Silicon Power Transistors 文件：78.9 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11021_05	Complementary Darlington Silicon Power Transistors 文件：78.9 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11021_08	Complementary Darlington Silicon Power Transistors 文件：132.66 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11021G	Complementary Darlington Silicon Power Transistors 文件：78.9 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11021G	Complementary Darlington Silicon Power Transistors 文件：132.66 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11021G	封装/外壳：TO-204AA，TO-3 包装：散装描述：TRANS PNP DARL 250V 15A TO204 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJ11021G	Trans Darlington PNP 250V 15A 3-Pin(2+Tab) TO-204 Tray	ETC 知名厂家	ETC
MJ11022	NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) 文件：21.71 Kbytes Page：1 Pages	WINGS 永盛电子	WINGS
MJ11022	Complementary Darlington Silicon Power Transistors 文件：132.66 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11022	Complementary Darlington Silicon Power Transistors 文件：78.9 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11022	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 文件：235.08 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11022G	Complementary Darlington Silicon Power Transistors 文件：132.66 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11022G	Complementary Darlington Silicon Power Transistors 文件：78.9 Kbytes Page：5 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11022G	封装/外壳：TO-204AA，TO-3 包装：管件描述：TRANS NPN DARL 250V 15A TO204 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJ11028	High-Current Complementary Silicon Power Transistors 文件：121.71 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11028	High?묬urrent Complementary Silicon Power Transistors 文件：68.44 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11028	isc Silicon NPN Darlington Power Transistor 文件：51.56 Kbytes Page：2 Pages	ISC 无锡固电	ISC
MJ11028_05	High?묬urrent Complementary Silicon Power Transistors 文件：68.44 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11028_08	High-Current Complementary Silicon Power Transistors 文件：121.71 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11028G	High?묬urrent Complementary Silicon Power Transistors 文件：68.44 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11028G	High-Current Complementary Silicon Power Transistors 文件：121.71 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11029	High-Current Complementary Silicon Power Transistors 文件：121.71 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11029	High?묬urrent Complementary Silicon Power Transistors 文件：68.44 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11029G	High?묬urrent Complementary Silicon Power Transistors 文件：68.44 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ11029G	High-Current Complementary Silicon Power Transistors 文件：121.71 Kbytes Page：4 Pages	ONSEMI 安森美半导体	ONSEMI
1102	Customer Specification Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 32 (7/40) AWG Tinned Copper 0.009 b) Insulation 0.010 Wall, Nom. PVC 0.029 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 3 WHITE 2 RED 4 GREEN 2) Cable Assembly 4 Components Cabled a) Twi	ALPHAWIRE	ALPHAWIRE
1102	Customer Specification Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 32 (7/40) AWG Tinned Copper 0.009 b) Insulation 0.010 Wall, Nom. PVC 0.029 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 3 WHITE 2 RED 4 GREEN 2) Cable Assembly 4 Components Cabled a) Twi	ALPHAWIRE	ALPHAWIRE
1102	Specifications Electrical Impedance 50 Ohms Frequency Range DC ~ 6 GHz Voltage Rating 335 Volts Peak Dielectic Withstanding Voltage 1000 Volts RMS Insertion Loss .20 dB Max. Mechanical Mating Snap-On Coupling Mating Torque 4.5 pounds (20N) Max. Engagement 2.3 pounds (10N) Min. Disengagement Cable Attach	L-COM 英飞畅	L-COM
1102A	200 V - 1,000 V Single Phase Bridge [VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1102	PCMCIA MODEM TRANSFORMERS 文件：98.89 Kbytes Page：2 Pages	XFMRS	XFMRS

MJ1102产品属性

类型
描述
型号
MJ1102
制造商
ISC
制造商全称
Inchange Semiconductor Company Limited
功能描述
isc Silicon NPN Darlington Power Transistor

MJ1102供应商更多...

更新时间：2025-12-25 18:19:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市粤骏腾电子科技有限公司	MJ11030	MOTOROLA/摩托罗拉	24+	TO-3	240	现货供应	询价
深圳市创新迹电子有限公司	MJ11029	MOT	22+	TO	20000	公司只有原装品质保障	询价
深圳市赛美科科技有限公司	MJ11031	原厂		can2	8650	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市毅创腾电子科技有限公司	MJ11032	ON	23+	TO-3	5500	现货,全新原装	询价
深圳市拓亿芯电子有限公司	MJ11029	MOT	25+	TO	30000	代理全新原装现货,价格优势	询价
中天科工半导体（深圳）有限公司	MJ11029G	ON/安森美	专业铁帽	TO-3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市振宏微科技有限公司	MJ1102F	OHMITE	23+	NA	2586	专做原装正品,假一罚百!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	MJ11030	MOT	25+	SOP6	18000	原厂直接发货进口原装	询价
贸泽芯城（深圳）电子科技有限公司	MJ11030G	ON/安森美	23+	TO-204(TO-3)	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市宏世佳电子科技有限公司	MJ11030G	ON	2025+	TO-3	3577	全新原厂原装产品、公司现货销售	询价

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MJ1102晶体管资料

MJ1102价格

MJ1102产品属性

MJ1102供应商更多...

MJ1102芯片相关品牌

MJ1102规格书下载地址

MJ1102参数引脚图相关

MJ1102数据表相关新闻

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MJD32CT4G

MJD127T4 ON原厂授权经销商

MJ11016

mjd31ct4g亚太地区代理商，绝对优势！！

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