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MJ11029晶体管资料
MJ11029别名：MJ11029三极管、MJ11029晶体管、MJ11029晶体三极管
MJ11029生产厂家：
MJ11029制作材料：Si-P+Darl+Di
MJ11029性质：开关管 （S）_功率放大 （L）
MJ11029封装形式：直插封装
MJ11029极限工作电压：60V
MJ11029最大电流允许值：50A
MJ11029最大工作频率：<1MHZ或未知
MJ11029引脚数：2
MJ11029最大耗散功率：300W
MJ11029放大倍数：β>1000
MJ11029图片代号：E-44
MJ11029vtest：60
MJ11029htest：999900
- MJ11029atest：50
MJ11029wtest：300
MJ11029代换 MJ11029用什么型号代替：
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJ11029 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A | ONSEMI 安森美半导体 |   | |
MJ11029 | POWER TRANSISTOR(50A,60-120V,300W) COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi | MOSPEC 统懋 | | |
MJ11029 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • | Motorola 摩托罗拉 | | |
MJ11029 | isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A • Complement to Type MJ11028 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier applic | ISC 无锡固电 | | |
MJ11029 | High-Current Complementary Silicon Power Transistors High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MJ11029 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de | SEME-LAB | | |
MJ11029 | High?묬urrent Complementary Silicon Power Transistors 文件：68.44 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | |
MJ11029 | High-Current Complementary Silicon Power Transistors 文件：121.71 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | |
MJ11029 | 300W PNP Darlington BJT Transistor | DIGITRON | | |
MJ11029 | Trans Darlington PNP 60V 50A 3-Pin(2+Tab) TO-204 Tray | NJS | | |
MJ11029 | 功率 50A 60V 达林顿 PNP | ONSEMI 安森美半导体 | | |
High-Current Complementary Silicon Power Transistors 文件：121.71 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
High?묬urrent Complementary Silicon Power Transistors 文件：68.44 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
PVC and Nylon LED Spacers 文件：130.419 Kbytes Page：1 Pages | Heyco | |
MJ11029产品属性
- 类型
描述
- 型号
MJ11029
- 功能描述
达林顿晶体管 50A 60V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
03+ |
TO |
14 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOT/ON |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
ON |
2025+ |
TO-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
MOT |
25+ |
SOP6 |
18000 |
原厂直接发货进口原装 |
|||
OHMITE |
23+ |
NA |
2586 |
专做原装正品,假一罚百! |
|||
MOT |
23+ |
TO |
30000 |
代理全新原装现货,价格优势 |
|||
ON/MOT |
2023+ |
TO-3 |
5800 |
进口原装,现货热卖 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
23+ |
TO-204(TO-3) |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MOTOROLA/摩托罗拉 |
24+ |
TO-3 |
240 |
现货供应 |
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MJ11029规格书下载地址
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