Complementary Darlington Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)

POWER TRANSISTORS(15A,150-250V,175W)

15 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 150 - 250 VOLTS 175 WATTS MJ11017,MJ11019,MJ11021 => PNP MJ11018,MJ11020,MJ11022 => NPN

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus

175W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

15 A，250 V，PNP 达林顿双极功率晶体管

The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications.The MJ11021(PNP) and MJ11022 (NPN) are complementary devices. • Pb-Free Packages are Available;

Trans Darlington PNP 250V 15A 3-Pin(2+Tab) TO-204 Tray

封装/外壳：TO-204AA，TO-3 包装：托盘 描述：TRANS PNP DARL 250V 15A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Darlington Silicon Power Transistors

文件：132.66 Kbytes Page：5 Pages

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

文件：235.08 Kbytes Page：6 Pages

Complementary Darlington Silicon Power Transistors

文件：78.9 Kbytes Page：5 Pages

Complementary Darlington Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO=-250V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):-3.4V(Max) @IC=-15A APPLICATIONS · Low current high speed switching applications · Low power audio amplifier

Complementary Darlington Silicon Power Transistors

文件：78.9 Kbytes Page：5 Pages

Complementary Darlington Silicon Power Transistors

文件：132.66 Kbytes Page：5 Pages

Complementary Darlington Silicon Power Transistors

文件：132.66 Kbytes Page：5 Pages

Complementary Darlington Silicon Power Transistors

文件：78.9 Kbytes Page：5 Pages

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS PNP DARL 250V 15A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS

15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS