Complementary Darlington Silicon Power Transistors are designed

for use as general purpose amplifiers, low frequency switching and

motor control applications.

Features

• High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types)

• Collector−Emitter Sustaining Voltage

VCEO(sus) = 250 Vdc (Min) − MJ11022, 21

• Low Collector−Emitter Saturation

VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A

= 1.8 V (Typ) @ IC = 10 A

• 100% SOA Tested @ VCE = 44 V

IC = 4.0 A

t = 250 ms

• Pb−Free Packages are Available*