Complementary Darlington Silicon Power Transistors

. . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.

• High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)

• Collector–Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) – MJ11018, 17

= 250 Vdc (Min) – MJ11022, 21

• Low Collector–Emitter Saturation

VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A

= 1.8 V (Typ) @ IC = 10 A

• Monolithic Construction

• 100 SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.