POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A

High-Current Complementary Silicon Power Transistors

High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P

300W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

50 A，60 V NPN 达林顿双极功率晶体管

These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc\n• Curves to 100 A (Pulsed)\n• Diode Protection to Rated IC\n• Monolithic Construction with Built-In Base-Emitter Shunt Resistor\n• Junction Temperature to +200°C\n• Pb-Free Packages are Available;

High?묬urrent Complementary Silicon Power Transistors

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High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

isc Silicon NPN Darlington Power Transistor

文件：51.56 Kbytes Page：2 Pages

High?묬urrent Complementary Silicon Power Transistors

文件：68.44 Kbytes Page：4 Pages

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

High?묬urrent Complementary Silicon Power Transistors

文件：68.44 Kbytes Page：4 Pages

Trans Darlington NPN 60V 50A 3-Pin(2+Tab) TO-204 Tray

封装/外壳：TO-204AE 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 60V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个