丝印代码：ISO5451Q；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

丝印代码：ISO5451Q；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

丝印代码：ISO5451Q；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

丝印代码：ISO5451Q；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

丝印代码：ISO5851Q；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

丝印代码：ISO5851Q；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

丝印代码：ISO5851Q；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

丝印代码：ISO5851Q；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

丝印代码：ISO5852SQ；ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

丝印代码：ISO5852SQ；ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

丝印代码：ISO5852SQ；ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

丝印代码：ISO5852SQ；ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

High-Voltage Insulated DC/DC Power Supply for SCALE™-2

Features Electrical insulation up to 18kVAC Creepage distance 60mm Output power 5W No electrolytic capacitors Shortens application development time Outstanding coupling capacitance 4pF Extremely reliable; long service life' Applications Traction Railroad power supplies Light rail vehic

高压隔离DC/DC电源

ISO5125I是一款单通道隔离DC/DC电源，用于3.3kV、4.5kV和6.5kV IGBT。输出功率为5W，使得6.5kV / 750A IGBT的开关频率可达到5kHz。ISO5125I为CONCEPT的1SP0335和1SP0340 SCALE-2高压IGBT驱动器提供电源。ISO5125I DC/DC电源可采用各种隔离电压，以涵盖两电平到多电平拓扑中的3.3kV到6.5kV IGBT应用的完整范围。 其他特性包括：爬电距离宽达60mm；极低耦合电容(4pF)；极为可靠的电路设计；牢固的封装，安装方便并可防振动。

高压隔离DC/DC电源

ISO5125I是一款单通道隔离DC/DC电源，用于3.3kV、4.5kV和6.5kV IGBT。输出功率为5W，使得6.5kV / 750A IGBT的开关频率可达到5kHz。ISO5125I为Power Integrations的1SP0335和1SP0340 SCALE-2高压IGBT驱动器提供电源。ISO5125I DC/DC电源可采用各种隔离电压，以涵盖两电平到多电平拓扑中的3.3kV到6.5kV IGBT应用的完整范围。 其他特性包括：爬电距离宽达60mm；极低耦合电容(4pF)；极为可靠的电路设计；牢固的封装，安装方便并可防振动。 操作电压峰值可达12kV• 绝缘测试电压高达18kVAC\n• 爬电距离为60mm\n• 输出功率为5W\n• 性能可靠，工作寿命长\n• 极低耦合电容(4pF);

高压隔离DC/DC电源

ISO5125I是一款单通道隔离DC/DC电源，用于3.3kV、4.5kV和6.5kV IGBT。输出功率为5W，使得6.5kV / 750A IGBT的开关频率可达到5kHz。ISO5125I为Power Integrations的1SP0335和1SP0340 SCALE-2高压IGBT驱动器提供电源。ISO5125I DC/DC电源可采用各种隔离电压，以涵盖两电平到多电平拓扑中的3.3kV到6.5kV IGBT应用的完整范围。 其他特性包括：爬电距离宽达60mm；极低耦合电容(4pF)；极为可靠的电路设计；牢固的封装，安装方便并可防振动。 操作电压峰值可达12kV• 绝缘测试电压高达18kVAC\n• 输出功率为5W\n• 极低耦合电容(4pF)\n;

High Voltage Insulated DC-DC Power Supply

Applications • Traction inverter • HVDC • Flexible AC transmission Systems (FACTS) • Industrial drives • Other industrial applications Description The ISO5125R-xx is a single-channel insulated DC-DC converter. It is a reliable and compact power supply designed for up to 4500 and 6500 V hi

High Voltage Insulated DC-DC Power Supply

Applications • Traction inverter • HVDC • Flexible AC transmission Systems (FACTS) • Industrial drives • Other industrial applications Description The ISO5125R-xx is a single-channel insulated DC-DC converter. It is a reliable and compact power supply designed for up to 4500 and 6500 V hi

High Voltage Insulated DC-DC Power Supply

Applications • Traction inverter • HVDC • Flexible AC transmission Systems (FACTS) • Industrial drives • Other industrial applications Description The ISO5125R-xx is a single-channel insulated DC-DC converter. It is a reliable and compact power supply designed for up to 4500 and 6500 V hi

High Voltage Insulated DC-DC Power Supply

Applications • Traction inverter • HVDC • Flexible AC transmission Systems (FACTS) • Industrial drives • Other industrial applications Description The ISO5125R-xx is a single-channel insulated DC-DC converter. It is a reliable and compact power supply designed for up to 4500 and 6500 V hi

High Voltage Insulated DC-DC Power Supply

Applications • Traction inverter • HVDC • Flexible AC transmission Systems (FACTS) • Industrial drives • Other industrial applications Description The ISO5125R-xx is a single-channel insulated DC-DC converter. It is a reliable and compact power supply designed for up to 4500 and 6500 V hi

ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

Uni-Directional ISOLATED DIGITAL COUPLERS

文件：187.44 Kbytes Page：6 Pages

Uni-Directional ISOLATED DIGITAL COUPLERS

文件：187.44 Kbytes Page：6 Pages

Uni-Directional ISOLATED DIGITAL COUPLERS

文件：187.44 Kbytes Page：6 Pages

包装：外壳 描述：DC/DC CONVERTER 5W 电源 - 外部/内部（板外） 直流转换器

包装：带盒（TB） 描述：DC/DC CONVERTER 5W 电源 - 外部/内部（板外） 直流转换器

Bidirectional ISOLATED DIGITAL COUPLERS

文件：170.6 Kbytes Page：5 Pages

Bidirectional ISOLATED DIGITAL COUPLERS

文件：170.6 Kbytes Page：5 Pages

Bidirectional ISOLATED DIGITAL COUPLERS

文件：170.6 Kbytes Page：5 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.59277 Mbytes Page：38 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.59277 Mbytes Page：38 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.59277 Mbytes Page：38 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.49303 Mbytes Page：39 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.49303 Mbytes Page：39 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.49303 Mbytes Page：39 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

文件：1.26676 Mbytes Page：37 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

文件：1.26676 Mbytes Page：37 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

文件：1.26676 Mbytes Page：37 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.67789 Mbytes Page：41 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.67789 Mbytes Page：41 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.67789 Mbytes Page：41 Pages

2.5 A Isolated IGBT, MOSFET Gate Driver

文件：1.30842 Mbytes Page：40 Pages

ISO5500EVM

文件：332.01 Kbytes Page：14 Pages

ISO5500 2.5-A Isolated IGBT, MOSFET Gate Driver

文件：1.47504 Mbytes Page：43 Pages

2.5 A Isolated IGBT, MOSFET Gate Driver

文件：1.30842 Mbytes Page：40 Pages

2.5 A Isolated IGBT, MOSFET Gate Driver

文件：1.30842 Mbytes Page：40 Pages

ISO5500EVM

文件：332.01 Kbytes Page：14 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.75737 Mbytes Page：34 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.75737 Mbytes Page：34 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.75737 Mbytes Page：34 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.46185 Mbytes Page：40 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.46185 Mbytes Page：40 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.46185 Mbytes Page：40 Pages