ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver

文件：1.66841 Mbytes Page：42 Pages

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T