型号 功能描述 生产厂家 企业 LOGO 操作
ISO5852S-EP

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

TI

德州仪器

ISO5852S-EP

5.7kVrms, 2.5A/5A enhanced 1-channel isolated gate driver w/split output, active protection features

TI

德州仪器

ISO5852S-EP

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件:1.6761 Mbytes Page:43 Pages

TI

德州仪器

ISO5852S-EP

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件:1.67464 Mbytes Page:43 Pages

TI

德州仪器

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件:1.67464 Mbytes Page:43 Pages

TI

德州仪器

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 28 (7/36) AWG Silver Plated Copper 0.015 b) Insulation 0.010 Wall, Nom. PTFE 0.035+/- 0.004 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, GRAY, VIOLET, WHITE/BLACK, WHITE/BLUE WHITE/ORANGE, WHITE/VIOLET

ALPHAWIREAlpha Wire

阿尔法电线

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

KNOWLES

楼氏电子

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. • [MOS] • Low ON-resistance • Ultrahigh-speed switching • 4V drive • [SBD]

SANYO

三洋

Power MOSFET(Vdss=20V)

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

IRF

Customer Specification

文件:69.76 Kbytes Page:3 Pages

ALPHAWIREAlpha Wire

阿尔法电线

更新时间:2025-10-4 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/
24+
SMD
5000
全新原装正品,现货销售
TI
23+
SOP16
3200
正规渠道,只有原装!
TI
23+
NA
20000
TI/德州仪器
20+
SOIC-16
5000
原厂原装订货诚易通正品现货会员认证企业
TI
23+
SOP16
3200
公司只做原装,可来电咨询
TI/德州仪器
23+
SOIC-16
2000
原装正品,支持实单
TI/德州仪器
25+
SOP16
880000
明嘉莱只做原装正品现货
TI
16+
SOIC
10000
原装正品
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
TI
24+
SMD
17900
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