型号 功能描述 生产厂家 企业 LOGO 操作
ISO5852S-EP

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

TI

德州仪器

ISO5852S-EP

5.7kVrms, 2.5A/5A enhanced 1-channel isolated gate driver w/split output, active protection features

TI

德州仪器

ISO5852S-EP

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件:1.6761 Mbytes Page:43 Pages

TI

德州仪器

ISO5852S-EP

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件:1.67464 Mbytes Page:43 Pages

TI

德州仪器

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件:1.67464 Mbytes Page:43 Pages

TI

德州仪器

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 28 (7/36) AWG Silver Plated Copper 0.015 b) Insulation 0.010 Wall, Nom. PTFE 0.035+/- 0.004 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, GRAY, VIOLET, WHITE/BLACK, WHITE/BLUE WHITE/ORANGE, WHITE/VIOLET

ALPHAWIRE

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

KNOWLES

楼氏电子

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. • [MOS] • Low ON-resistance • Ultrahigh-speed switching • 4V drive • [SBD]

SANYO

三洋

Power MOSFET(Vdss=20V)

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

IRF

Customer Specification

文件:69.76 Kbytes Page:3 Pages

ALPHAWIRE

更新时间:2025-11-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
24+
SOP16300mil
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
TI/德州仪器
24+
NA/
566
优势代理渠道,原装正品,可全系列订货开增值税票
TI
18+
SMD
1
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TI
24+
SMD
17900
电源管理IC开发工具
22+
5000
只做原装鄙视假货15118075546
TI/
24+
SMD
5000
全新原装正品,现货销售
TI/德州仪器
25+
SOP16
880000
明嘉莱只做原装正品现货
TI/德州仪器
20+
SOIC-16
5000
原厂原装订货诚易通正品现货会员认证企业
TI
25+
SOIC (DW)
6000
原厂原装,价格优势
TI(德州仪器)
2526+
SOIC-16
50000
只做原装优势现货库存,渠道可追溯

ISO5852S-EP芯片相关品牌

ISO5852S-EP数据表相关新闻