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ISO5451中文资料
ISO5451数据手册规格书PDF详情
1 Features
1• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Device HBM Classification Level 3A
– Device CDM Classification Level C6
• 50-kV/μs Minimum and 100-kV/μs Typical
Common-Mode Transient Immunity (CMTI)
at VCM = 1500 V
• 2.5-A Peak Source and 5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Under Voltage Lock-Out (UVLO)
with Ready (RDY) Pin Indication
• Active Output Pull-down and Default Low Outputs
with Low Supply or Floating Inputs
• 3-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• Isolation Surge Withstand Voltage 10000-VPK
• Safety-Related Certifications:
– 8000-VPK VIOTM and 1420-VPK VIORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-VRMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
– All Certifications Complete per UL, VDE, CQC,
TUV and Planned for CSA
2 Applications
• Isolated IGBT and MOSFET Drives in:
– HEV and EV Power Modules
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– Induction Heating
3 Description
The ISO5451-Q1 is a 5.7-kVRMS, reinforced isolated
gate driver for IGBTs and MOSFETs with 2.5-A
source and 5-A sink current. The input side operates
from a single 3-V to 5.5-V supply. The output side
allows for a supply range from minimum 15 V to
maximum 30 V. Two complementary CMOS inputs
control the output state of the gate driver. The short
propagation time of 76 ns assures accurate control of
the output stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overload
condition. Upon a DESAT detect, the gate driver
output is driven low to VEE2 potential, turning the
IGBT immediately off.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI/德州仪器 |
2023+ |
SOP16 |
50000 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
|||
24+ |
模块 |
6000 |
美国德州仪器TEXASINSTRUMENTS原厂代理辉华拓展内地现 |
||||
TI |
16+ |
SOIC16 |
32500 |
全新原装现货供应2 |
|||
TI/德州仪器 |
23+ |
SOIC16 |
18204 |
原装正品代理渠道价格优势 |
|||
TI(德州仪器) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
TI |
23+ |
SOIC-16 |
30000 |
全新原装正品 |
|||
TI/德州仪器 |
21+ |
SOIC-16 |
10000 |
原装正品 |
|||
TI/德州仪器 |
22+ |
N/V |
986000 |
原装现货 欢迎来电咨询 |
|||
Texas Instruments |
25+ |
SOIC16 |
18000 |
TI优势渠道,大量原装库存现货,交期快,欢迎询价。 |
|||
TI |
23+ |
SOIC-16 |
180 |
全新原装假一赔十 |
ISO5451 资料下载更多...
ISO5451相关电子新闻
ISO5451DW
ISO5451DW
2023-3-28
ISO5451 芯片相关型号
- GQM2195G2H7R3BB12
- GQM2195G2H7R3BB12_V01
- GQM2195G2H7R3CB12_V01
- GQM2195G2H7R3DB12
- GQM2195G2H7R3DB12_V01
- ISO5125I
- ISO5125R-100
- ISO5125R-120
- ISO5125R-45
- ISO5125R-65
- ISO5125R-XX
- ISO5451-Q1
- ISO5451QDWQ1
- ISO5451QDWRQ1
- ISO5451QDWRQ1.A
- ISO5451QDWRQ1.B
- ISO5851QDWQ1
- ISO5851QDWRQ1
- ISO5851QDWRQ1.A
- ISO5851QDWRQ1.B
- L530
- M2UDS-5A-R2
- M2UDS-5A-R2SLASHCE
- M2UDS-5A-R2SLASHN
- M51994FP
- M51994P
- R5-E-BLK-I-F-0
- R5-E-BLK-I-F-1
- R5-E-BLK-I-F-2
- R5-E-BLK-I-F-3
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