位置:ISO5852S-EP > ISO5852S-EP详情
ISO5852S-EP中文资料
ISO5852S-EP数据手册规格书PDF详情
1 Features
1• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Device HBM Classification Level 3A
– Device CDM Classification Level C6
• 100-kV/μs Minimum Common-Mode Transient
Immunity (CMTI) at VCM = 1500 V
• Split Outputs to Provide 2.5-A Peak Source and
5-A Peak Sink Currents
• Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
• 2-A Active Miller Clamp
• Output Short-Circuit Clamp
• Soft Turn-Off (STO) during Short Circuit
• Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
• Input and Output Undervoltage Lockout (UVLO)
with Ready (RDY) Pin Indication
• Active Output Pulldown and Default Low Outputs
with Low Supply or Floating Inputs
• 2.25-V to 5.5-V Input Supply Voltage
• 15-V to 30-V Output Driver Supply Voltage
• CMOS Compatible Inputs
• Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
• Isolation Surge Withstand Voltage 12800-VPK
• Safety-Related Certifications:
– 8000-VPK VIOTM and 2121-VPK VIORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-VRMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
– All Certifications Complete per UL, VDE, CQC,
TUV and Planned for CSA
2 Applications
• Isolated IGBT and MOSFET Drives in:
– HEV and EV Power Modules
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– Induction Heating
3 Description
The ISO5852S-Q1 device is a 5.7-kVRMS, reinforced
isolated gate driver for IGBTs and MOSFETs with
split outputs, OUTH and OUTL, providing 2.5-A
source and 5-A sink current. The input side operates
from a single 2.25-V to 5.5-V supply. The output side
allows for a supply range from minimum 15 V to
maximum 30 V. Two complementary CMOS inputs
control the output state of the gate driver. The short
propagation time of 76 ns provides accurate control
of the output stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overcurrent
condition. Upon a DESAT detect, a mute logic
immediately blocks the output of the isolator and
initiates a soft-turnoff procedure which disables the
OUTH pin and pulls the OUTL pin to low over a time
span of 2 μs. When the OUTL pin reaches 2 V with
respect to the most-negative supply potential, VEE2,
the gate-driver output is pulled hard to the VEE2
potential, turning the IGBT immediately off.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
N/A |
99 |
||||||
TI |
24+ |
SMD |
17900 |
电源管理IC开发工具 |
|||
TI |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
TI |
18+ |
SMD |
1 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TI/ |
24+ |
SMD |
5000 |
全新原装正品,现货销售 |
|||
TI |
24+ |
con |
318185 |
优势库存,原装正品 |
|||
TI/ |
24+ |
SMD |
5000 |
只有原装 |
|||
TI |
24+ |
SMD |
8000 |
新到现货,只做全新原装正品 |
|||
TI |
16+ |
SOIC |
10000 |
原装正品 |
ISO5852S-EP 资料下载更多...
ISO5852S-EP 芯片相关型号
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