ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features

ISO5851 是一款用于 IGBT 和 MOSFET 的 5.7 kVRMS 增强型隔离栅极驱动器，具有 2.5A 的拉电流能力和 5A 的灌电流能力。输入端由 3V 至 5.5V 的单电源供电运行。输出侧支持的电源电压范围为 15V 至 30V。两路互补 CMOS 输入控制栅极驱动器输出状态。76ns 的短暂传播时间保证了对于输出级的精确控制。 \n\n内置的去饱和 (DESAT) 故障检测功能可识别 IGBT 何时处于过载状态。当检测到 DESAT 时，栅极驱动器输出会被拉低为 VEE2 电势，从而将 IGBT 立即关断。 \n\n当发生去饱和故障时，器件会通过隔离隔栅发送故障信号，以将 • 在 VCM = 1500V 时，共模瞬态抗扰度 (CMTI) 的最小值为 100kV/µs\n• 2.5A 峰值拉电流和 5A 峰值灌电流\n• 短暂传播延迟：76ns（典型值），110ns（最大值）\n• 2A 有源米勒钳位 \n• 输出短路钳位\n• 在检测到去饱和故障时通过 FLT 发出故障报警并通过 RST 复位\n• 具有就绪 (RDY) 引脚指示的输入和输出欠压锁定 (UVLO)\n• 有源输出下拉特性，在低电源或输入悬空的情况下默认输出低电平\n• 3V 至 5.5V 输入电源电压\n• 15V 至 30V 输出驱动器电源电压\n• 互补金属氧化物半导体 (CMOS) 兼容输;

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.75737 Mbytes Page：34 Pages

丝印代码：ISO5851Q；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

丝印代码：ISO5851Q；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

丝印代码：ISO5851Q；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

丝印代码：ISO5851Q；ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

Automotive 5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features

ISO5851-Q1 是一款用于 IGBT 和 MOSFET 的 5.7 kVRMS 增强型隔离栅极驱动器，具有 2.5A 的拉电流能力和 5A 的灌电流能力。输入端由 3V 至 5.5V 的单电源供电运行。输出端允许的电源范围为 15V 至 30V。两个互补 CMOS 输入控制栅极驱动器的输出状态。76ns 的短暂传播时间保证了对于输出级的精确控制。内置的去饱和 (DESAT) 故障检测功能可识别 IGBT 何时处于过载状态。当检测到 DESAT 时，栅极驱动器输出会被拉低为 VEE2 电势，从而将 IGBT 立即关断。当发生去饱和故障时，器件会通过隔离隔栅发送故障信号，以将输入端的 FLT • 适用于汽车电子 标准\n• 器件温度 1 级：-40°C 至 125°C 的环境运行温度范围 \n• 器件充电器件模型 (CDM) 分类等级 C6\n• 在 VCM = 1500V 时，共模瞬态抗扰度 (CMTI) 的最小值为 100kV/μs\n• 短暂传播延迟：76ns（典型值），110ns（最大值）\n• 输出短路钳位\n• 具有就绪 (RDY) 引脚指示的输入和输出欠压锁定 (UVLO)\n• 3V 至 5.5V 输入电源电压\n• 互补金属氧化物半导体 (CMOS) 兼容输入\n• 可承受的浪涌隔离电压达 12800VPK”\n• 符合 DIN V VDE V 0884-10 (;

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.75737 Mbytes Page：34 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.75737 Mbytes Page：34 Pages

功能：栅极驱动器 包装：盒 描述：EVAL BOARD FOR ISO5851 开发板，套件，编程器 评估和演示板及套件

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.46185 Mbytes Page：40 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.46185 Mbytes Page：40 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.46185 Mbytes Page：40 Pages

Small-Scale Control, Medium Speed Type, On-Chip LCD Driver 4-Bit Single Chip Microcomputer

Small-Scale Control, Medium Speed Type, On-Chip LCD Driver 4-Bit Single Chip Microcomputer

8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

PNP SILICON POWER TRANSISTORS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. Features • Switching Regulators • Inverters • Solenoid an

DOLBY PROLOGIC DECODER

DOLBY PROLOGIC DECODER

Dual, 10-Bit, 165Msps, Current-Output DAC

文件：446.96 Kbytes Page：18 Pages