ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

5.7kVrms, 2.5A/5A single-channel isolated gate driver w/ split output, STO & protection features

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件：1.67464 Mbytes Page：43 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

文件：1.4767 Mbytes Page：37 Pages

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件：1.6761 Mbytes Page：43 Pages

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

文件：1.4767 Mbytes Page：37 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

文件：1.4767 Mbytes Page：37 Pages

功能：栅极驱动器 包装：散装 描述：DEVELOPMENT INTERFACE 开发板，套件，编程器 评估和演示板及套件

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features

文件：1.4767 Mbytes Page：37 Pages

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件：1.67464 Mbytes Page：43 Pages

5.7kVrms, 2.5A/5A enhanced 1-channel isolated gate driver w/split output, active protection features

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件：1.6761 Mbytes Page：43 Pages

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件：1.67464 Mbytes Page：43 Pages

功能：栅极驱动器 包装：盒 描述：EVAL BOARD FOR ISO5852S 开发板，套件，编程器 评估和演示板及套件

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件：1.67464 Mbytes Page：43 Pages

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件：1.6761 Mbytes Page：43 Pages

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件：1.67464 Mbytes Page：43 Pages

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

文件：1.6761 Mbytes Page：43 Pages

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver

文件：1.66841 Mbytes Page：42 Pages

Automotive 5.7kVrms 2.5A/5A single-channel isolated gate driver w/split output & active protection

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver

文件：1.66841 Mbytes Page：42 Pages

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver

文件：1.66841 Mbytes Page：42 Pages

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 28 (7/36) AWG Silver Plated Copper 0.015 b) Insulation 0.010 Wall, Nom. PTFE 0.035+/- 0.004 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, GRAY, VIOLET, WHITE/BLACK, WHITE/BLUE WHITE/ORANGE, WHITE/VIOLET

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. • [MOS] • Low ON-resistance • Ultrahigh-speed switching • 4V drive • [SBD]

Power MOSFET(Vdss=20V)

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

Customer Specification

文件：69.76 Kbytes Page：3 Pages