ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features

ISO5451 是一款用于 IGBT 和 MOSFET 的 5.7 kVRMS 增强型隔离栅极驱动器，具有 2.5A 的拉电流能力和 5A 的灌电流能力。输入端由 3V 至 5.5V 的单电源供电运行。输出侧支持的电源电压范围为 15V 至 30V。两路互补 CMOS 输入控制栅极驱动器输出状态。76ns 的短暂传播时间保证了对于输出级的精确控制。 \n\n内置的去饱和 (DESAT) 故障检测功能可识别 IGBT 何时处于过载状态。当检测到 DESAT 时，栅极驱动器输出会被拉低为 VEE2 电势，从而将 IGBT 立即关断。 \n\n当发生去饱和故障时，器件会通过隔离隔栅发送故障信号，以将 • 在 VCM = 1500V 时，共模瞬态抗扰度 (CMTI) 的最小值为 50kV/µs，典型值为 100kV/µs\n• 2.5A 峰值拉电流和 5A 峰值灌电流 \n• 短暂传播延迟：76ns（典型值），110ns（最大值）\n• 2A 有源米勒钳位 \n• 输出短路钳位\n• 在检测到去饱和故障时通过 FLT 发出故障报警，并通过 RST 复位\n• 具有就绪 (RDY) 引脚指示的输入和输出欠压锁定 (UVLO)\n• 有源输出下拉特性，在低电源或输入悬空的情况下默认输出低电平\n• 3V 至 5.5V 输入电源电压\n• 15V 至 30V 输出驱动器电源电压\n• 互补金属氧化;

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.59277 Mbytes Page：38 Pages

丝印代码：ISO5451Q；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

丝印代码：ISO5451Q；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

丝印代码：ISO5451Q；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

丝印代码：ISO5451Q；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

Automotive 5.7kVrms, 2.5A/5A single-channel isolated gate driver with active protection features

ISO5451-Q1 是一款用于 IGBT 和 MOSFET 的 5.7 kVRMS 增强型隔离栅极驱动器，具有 2.5A 的拉电流能力和 5A 的灌电流能力。输入端由 3V 至 5.5V 的单电源供电运行。输出端允许的电源范围为 15V 至 30V。两个互补 CMOS 输入控制栅极驱动器的输出状态。76ns 的短暂传播时间保证了对于输出级的精确控制。内置的去饱和 (DESAT) 故障检测功能可识别 IGBT 何时处于过载状态。当检测到 DESAT 时，栅极驱动器输出会被拉低为 VEE2 电势，从而将 IGBT 立即关断。当发生去饱和故障时，器件会通过隔离隔栅发送故障信号，以将输入端的 FLT • 适用于汽车电子 应用 \n• 器件温度 1 级：-40°C 至 125°C 的环境运行温度范围 \n• 器件充电器件模型 (CDM) 分类等级 C6\n• 在 VCM = 1500V 时，共模瞬态抗扰度 (CMTI) 的最小值为 50kV/μs，典型值为 100kV/μs\n• 短暂传播延迟：76ns（典型值），110ns（最大值）\n• 输出短路钳位\n• 具有就绪 (RDY) 引脚指示的输入和输出欠压锁定 (UVLO)\n• 3V 至 5.5V 输入电源电压\n• 互补金属氧化物半导体 (CMOS) 兼容输入\n• 可承受的浪涌隔离电压达 10000VPK \n• 符合 DIN V V;

ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.59277 Mbytes Page：38 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features

文件：1.59277 Mbytes Page：38 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.49303 Mbytes Page：39 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.49303 Mbytes Page：39 Pages

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.49303 Mbytes Page：39 Pages

ISDN HDLC AND GCI CONTROLLER

GENERAL DESCRIPTION ST5451 HDLC and GCI controller is a CMOS circuit fully developed by STMicroelectronics and diffused in advanced 1.2 µm HCMOS3 technology. The device is intended to be used mainly in ISDN applications, in Terminal (TE) and in Line Terminations (LT). ■ MONOLITHIC ISDN ORIENTED

ISDN HDLC AND GCI CONTROLLER

GENERAL DESCRIPTION ST5451 HDLC and GCI controller is a CMOS circuit fully developed by STMicroelectronics and diffused in advanced 1.2 µm HCMOS3 technology. The device is intended to be used mainly in ISDN applications, in Terminal (TE) and in Line Terminations (LT). ■ MONOLITHIC ISDN ORIENTED

LED Display Drivers

文件：125.54 Kbytes Page：8 Pages

LED Display Drivers

文件：125.54 Kbytes Page：8 Pages

AND-OR-INVERT GATES

文件：221.31 Kbytes Page：7 Pages