型号 功能描述 生产厂家 企业 LOGO 操作
IS41C16100-60TL

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

IS41C16100-60TL产品属性

  • 类型

    描述

  • 型号

    IS41C16100-60TL

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

更新时间:2025-11-20 9:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI/芯成
2450+
TSOP44
6540
只做原厂原装正品现货或订货!终端工厂可以申请样品!
ISSI
18+14+
SOJ42
1984
原装现货
ISSI
23+
SOJ42
89630
当天发货全新原装现货
ISSI
25+
SOJ42
880000
明嘉莱只做原装正品现货
ISSI
23+
SOJ24
24981
原装正品代理渠道价格优势
ISSI
21+
SOJ24
19600
一站式BOM配单
ISSI, Integrated Silicon Solut
24+
42-SOJ
56200
一级代理/放心采购
ISSI/芯成
24+
SOJ24
60000
全新原装现货
ISSI/芯成
24+
824
原装现货
ISSI
23+
SOP
7000

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