型号 功能描述 生产厂家 企业 LOGO 操作
IS41C16100-60TL

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:169.53 Kbytes Page:23 Pages

ISSI

矽成半导体

IS41C16100-60TL产品属性

  • 类型

    描述

  • 型号

    IS41C16100-60TL

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

更新时间:2025-10-3 12:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI/矽成
829
DRAM / 1MX16 EDO / SOJ-42 / 50
1940
ISSI
23+
TSOP2-50
4709
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ISSI
25+
SOJ42
880000
明嘉莱只做原装正品现货
ISSI
23+
SOP
8000
只做原装现货
ISSI
23+
SOJ24
24981
原装正品代理渠道价格优势
ISSI
25+
SOJ-42
16000
原装优势绝对有货
ISSI
23+
SSOP
50000
全新原装正品现货,支持订货
ISSI
2023+
TSOP
50000
原装现货
ISSI Integrated Silicon Soluti
22+
42SOJ
9000
原厂渠道,现货配单
ISSI
24+
SOP
5000
只做原装公司现货

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