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IRL3705价格
参考价格:¥2.9614
型号:IRL3705NPBF 品牌:International 备注:这里有IRL3705多少钱,2024年最近7天走势,今日出价,今日竞价,IRL3705批发/采购报价,IRL3705行情走势销售排行榜,IRL3705报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤10mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsutilizeadvanced processingtechniquestoachieveextremelylowonresistance persiliconarea.Thisbenefit,combined withthefastswitchingspeedandruggedizeddevice designthatHEXFETPowerMOSFETsarewell knownfor,providesthedesignerwithanex | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=8.0mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoper | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=8.0mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoper | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET VDSS=55V RDS(on)=8.0mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoper | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET VDSS=55V RDS(on)=8.0mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoper | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=8.0mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoper | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET VDSS=55V RDS(on)=8.0mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoper | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor 文件:324.79 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:487.11 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor 文件:316.38 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:487.11 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor 文件:263.64 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Logic-LevelGateDrive 文件:197.59 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:303.25 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:303.25 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Logic-LevelGateDrive 文件:197.59 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Logic-LevelGateDrive 文件:303.25 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor 文件:338.96 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:382.97 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:382.97 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor 文件:299.88 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ROTARYMOTION|PRECISIONSENSOR Features •BushingMount/SleeveBearing •7/8”to1-3/4”DiameterBushingMount •Wirewound3,5and10-TurnPrecisionPotentiometers | SensataSensata Technologies SensataSensata Technologies | |||
NEMASTEELMETALBOX 文件:160.66 Kbytes Page:2 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
NEMASTEELMETALBOX 文件:160.66 Kbytes Page:2 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
LPWA/Sub-GHzCellularCeramicChipAntenna 文件:1.41966 Mbytes Page:11 Pages | ABRACONAbracon Corporation 阿布雷肯 | |||
LPWA/Sub-GHzCellularCeramicChipAntennaEvaluationBoard 文件:1.01662 Mbytes Page:4 Pages | ABRACONAbracon Corporation 阿布雷肯 |
IRL3705产品属性
- 类型
描述
- 型号
IRL3705
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-220AB
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
D2PAK |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
2020+ |
TO-220 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INFINEON/英飞凌 |
21+ |
TO-220 |
500 |
全新、原装 |
|||
IR |
23+ |
TO-220 |
5000 |
专做原装正品,假一罚百! |
|||
IR |
1822+ |
TO-220 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
|||
IR |
23+ |
TO262-3 |
24400 |
正规渠道,只有原装! |
|||
21+ |
SOP16 |
10000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
INFINEON/英飞凌 |
21+ |
NA |
4650 |
只做原装,假一罚十 |
|||
INFINEON/IR |
23+ |
PG-TO262-3 |
2200 |
原装现货支持送检 |
IRL3705规格书下载地址
IRL3705参数引脚图相关
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DdatasheetPDF页码索引
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