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位置：首页 > IC中文资料第12833页 > IRL3705

IRL3705价格

参考价格：￥2.9614

型号：IRL3705NPBF 品牌：International 备注：这里有IRL3705多少钱，2026年最近7天走势，今日出价，今日竞价，IRL3705批发/采购报价，IRL3705行情走势销售排行榜，IRL3705报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL3705N

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705N

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤10mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio

ISC

无锡固电

IRL3705N/L

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705NLPBF

HEXFET Power MOSFET

IRF

IRL3705NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex

INFINEON

英飞凌

IRL3705NS

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705NSPBF

HEXFET Power MOSFET

IRF

IRL3705Z

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZL

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZLPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZS

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZSPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705NL

Isc N-Channel MOSFET Transistor

文件：324.79 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705NLPBF

HEXFET Power MOSFET

INFINEON

英飞凌

IRL3705NPBF

ADVANCED PROCESS TECHNOLOGY

文件：487.11 Kbytes Page：9 Pages

IRF

IRL3705NPBF

isc N-Channel MOSFET Transistor

文件：316.38 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705NPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：487.11 Kbytes Page：9 Pages

IRF

IRL3705NS

采用 D²PAK 封装的 IR MOSFET 55 V

INFINEON

英飞凌

IRL3705NS

isc N-Channel MOSFET Transistor

文件：263.64 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705NSL

Logic-Level Gate Drive

文件：197.59 Kbytes Page：11 Pages

IRF

IRL3705NSPBF

ADVANCED PROCESS TECHNOLOGY

文件：303.25 Kbytes Page：11 Pages

IRF

IRL3705NSPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：303.25 Kbytes Page：11 Pages

IRF

IRL3705NSTRL

Logic-Level Gate Drive

文件：197.59 Kbytes Page：11 Pages

IRF

IRL3705NSTRLPBF

Logic-Level Gate Drive

文件：303.25 Kbytes Page：11 Pages

IRF

IRL3705Z

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

INFINEON

英飞凌

IRL3705Z

N-Channel MOSFET Transistor

文件：338.96 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705ZPBF

ADVANCED PROCESS TECHNOLOGY

文件：382.97 Kbytes Page：12 Pages

IRF

IRL3705ZPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：382.97 Kbytes Page：12 Pages

IRF

IRL3705ZS

Isc N-Channel MOSFET Transistor

文件：299.88 Kbytes Page：2 Pages

ISC

无锡固电

3705

ROTARY MOTION | PRECISION SENSOR

Features • Bushing Mount / Sleeve Bearing • 7/8” to 1-3/4” Diameter Bushing Mount • Wirewound 3, 5 and 10-Turn Precision Potentiometers

SENSATA

森萨塔

3705-BA

NEMA SHEET METAL BOX

文件：160.45 Kbytes Page：2 Pages

BUD

3705-BA

NEMA STEEL METAL BOX

文件：160.66 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

3705-CA

NEMA STEEL METAL BOX

文件：160.66 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ACAR3705-SB

LPWA/ Sub-GHz Cellular Ceramic Chip Antenna

文件：1.41966 Mbytes Page：11 Pages

ABRACON

IRL3705产品属性

  • 类型

    描述

  • 型号

    IRL3705

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-220AB

IRL3705供应商更多...

更新时间：2026-3-2 23:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市威雅利发展有限公司
IRL3705Z
IR
13+
TO-220
45
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市高捷芯城科技有限公司
IRL3705ZSTRLPBF
Infineon(英飞凌)
25+
D2PAK
21000
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市富芯乐电子科技有限公司
IRL3705Z
IR
24+
TO-220
5000
只做原装正品现货 欢迎来电查询15919825718
询价
中天科工半导体（深圳）有限公司
IRL3705ZPBF
INFINEON/英飞凌
25+
TO-220
32360
INFINEON/英飞凌全新特价IRL3705ZPBF即刻询购立享优惠#长期有货
询价
柒号芯城电子商务(深圳)有限公司
IRL3705ZLPBF
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
深圳市科恒伟业电子有限公司
IRL3705ZSTRLPBF
INFINEON/英飞凌
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
询价
深圳市拓亿芯电子有限公司
IRL3705ZPBF
IR
25+
TO-220
22000
原装现货假一罚十
询价
深圳市振宏微科技有限公司
IRL3705Z
IR
23+
TO-220
5000
专做原装正品,假一罚百!
询价
深圳市得捷芯城科技有限公司
IRL3705ZSTRLPBF
Infineon(英飞凌)
25+
D2PAK
21000
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市能元时代电子有限公司
IRL3705Z
IR
23+
TO-220
20878
##公司主营品牌长期供应100%原装现货可含税提供技术
询价

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IRL3705规格书下载地址

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