您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第12833页 > IRL3705

IRL3705价格

参考价格：￥2.9614

型号：IRL3705NPBF 品牌：International 备注：这里有IRL3705多少钱，2025年最近7天走势，今日出价，今日竞价，IRL3705批发/采购报价，IRL3705行情走势销售排行榜，IRL3705报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRL3705N

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705N

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤10mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio

ISC

无锡固电

IRL3705N/L

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705NLPBF

HEXFET Power MOSFET

IRF

IRL3705NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex

Infineon

英飞凌

IRL3705NS

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705NSPBF

HEXFET Power MOSFET

IRF

IRL3705Z

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZL

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZLPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZS

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZSPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705NL

Isc N-Channel MOSFET Transistor

文件：324.79 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705NPBF

ADVANCED PROCESS TECHNOLOGY

文件：487.11 Kbytes Page：9 Pages

IRF

IRL3705NPBF

isc N-Channel MOSFET Transistor

文件：316.38 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705NPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：487.11 Kbytes Page：9 Pages

IRF

IRL3705NS

isc N-Channel MOSFET Transistor

文件：263.64 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705NSL

Logic-Level Gate Drive

文件：197.59 Kbytes Page：11 Pages

IRF

IRL3705NSPBF

ADVANCED PROCESS TECHNOLOGY

文件：303.25 Kbytes Page：11 Pages

IRF

IRL3705NSPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：303.25 Kbytes Page：11 Pages

IRF

IRL3705NSTRL

Logic-Level Gate Drive

文件：197.59 Kbytes Page：11 Pages

IRF

IRL3705NSTRLPBF

Logic-Level Gate Drive

文件：303.25 Kbytes Page：11 Pages

IRF

IRL3705Z

N-Channel MOSFET Transistor

文件：338.96 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705ZPBF

ADVANCED PROCESS TECHNOLOGY

文件：382.97 Kbytes Page：12 Pages

IRF

IRL3705ZPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：382.97 Kbytes Page：12 Pages

IRF

IRL3705ZS

Isc N-Channel MOSFET Transistor

文件：299.88 Kbytes Page：2 Pages

ISC

无锡固电

3705

ROTARY MOTION | PRECISION SENSOR

Features • Bushing Mount / Sleeve Bearing • 7/8” to 1-3/4” Diameter Bushing Mount • Wirewound 3, 5 and 10-Turn Precision Potentiometers

Sensata

森萨塔

3705-BA

NEMA STEEL METAL BOX

文件：160.66 Kbytes Page：2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

3705-CA

NEMA STEEL METAL BOX

文件：160.66 Kbytes Page：2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

ACAR3705-SB

LPWA/ Sub-GHz Cellular Ceramic Chip Antenna

文件：1.41966 Mbytes Page：11 Pages

ABRACON

ACAR3705-SB-EVB

LPWA/ Sub-GHz Cellular Ceramic Chip Antenna Evaluation Board

文件：1.01662 Mbytes Page：4 Pages

ABRACON

IRL3705产品属性

  • 类型

    描述

  • 型号

    IRL3705

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-220AB

IRL3705供应商更多...

更新时间：2025-8-16 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IRL3705ZSTRRPBF
IR
24+
NA/
4050
原装现货,当天可交货,原型号开票
询价
深圳市凌旭科技有限公司
IRL3705ZPBF
IR
2016+
TO-220
9364
公司只做原装,假一罚十,可开17%增值税发票!
询价
深圳市纳艾斯科技有限公司
IRL3705ZPBF
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市威雅利发展有限公司
IRL3705ZSL3705ZS
IR
1932+
TO-263
425
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市金芯世纪电子有限公司
IRL3705ZPBF
INFINEON/英飞凌
22+
TO-220
100000
代理渠道/只做原装/可含税
询价
深圳市科芯源微电子有限公司
IRL3705ZPBF
INFINEON/英飞凌
25+
TO220AB
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市昌和盛利电子有限公司
IRL3705ZPBF
IR
23+
TO-220AB
8238
询价
千层芯半导体(深圳)有限公司
IRL3705ZPBF
IR
24+
TO-220
80000
代理进口原装现货假一赔十
询价
深圳市华睿芯科技有限公司
IRL3705ZSTRLPBF
IR
24+
TO-263
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市科恒伟业电子有限公司
IRL3705Z
IR
1822+
TO-220
9852
只做原装正品假一赔十为客户做到零风险!!
询价

IRL3705芯片相关品牌

IRL3705规格书下载地址

IRL3705参数引脚图相关

IRL3705数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示