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位置：首页 > IC中文资料第12833页 > IRL3705

IRL3705价格

参考价格：￥2.9614

型号：IRL3705NPBF 品牌：International 备注：这里有IRL3705多少钱，2025年最近7天走势，今日出价，今日竞价，IRL3705批发/采购报价，IRL3705行情走势销售排行榜，IRL3705报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL3705N

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705N

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤10mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operatio

ISC

无锡固电

IRL3705N/L

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705NLPBF

HEXFET Power MOSFET

IRF

IRL3705NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705NPBF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex

Infineon

英飞凌

IRL3705NS

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRL3705NSPBF

HEXFET Power MOSFET

IRF

IRL3705Z

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZL

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZLPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZS

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705ZSPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705NL

Isc N-Channel MOSFET Transistor

文件：324.79 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705NLPBF

HEXFET Power MOSFET

Infineon

英飞凌

IRL3705NPBF

ADVANCED PROCESS TECHNOLOGY

文件：487.11 Kbytes Page：9 Pages

IRF

IRL3705NPBF

isc N-Channel MOSFET Transistor

文件：316.38 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705NPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：487.11 Kbytes Page：9 Pages

IRF

IRL3705NS

采用 D²PAK 封装的 IR MOSFET 55 V

Infineon

英飞凌

IRL3705NS

isc N-Channel MOSFET Transistor

文件：263.64 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705NSL

Logic-Level Gate Drive

文件：197.59 Kbytes Page：11 Pages

IRF

IRL3705NSPBF

ADVANCED PROCESS TECHNOLOGY

文件：303.25 Kbytes Page：11 Pages

IRF

IRL3705NSPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：303.25 Kbytes Page：11 Pages

IRF

IRL3705NSTRL

Logic-Level Gate Drive

文件：197.59 Kbytes Page：11 Pages

IRF

IRL3705NSTRLPBF

Logic-Level Gate Drive

文件：303.25 Kbytes Page：11 Pages

IRF

IRL3705Z

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRL3705Z

N-Channel MOSFET Transistor

文件：338.96 Kbytes Page：2 Pages

ISC

无锡固电

IRL3705ZPBF

ADVANCED PROCESS TECHNOLOGY

文件：382.97 Kbytes Page：12 Pages

IRF

IRL3705ZPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：382.97 Kbytes Page：12 Pages

IRF

IRL3705ZS

Isc N-Channel MOSFET Transistor

文件：299.88 Kbytes Page：2 Pages

ISC

无锡固电

3705

ROTARY MOTION | PRECISION SENSOR

Features • Bushing Mount / Sleeve Bearing • 7/8” to 1-3/4” Diameter Bushing Mount • Wirewound 3, 5 and 10-Turn Precision Potentiometers

Sensata

森萨塔

3705-BA

NEMA SHEET METAL BOX

文件：160.45 Kbytes Page：2 Pages

BUD

3705-BA

NEMA STEEL METAL BOX

文件：160.66 Kbytes Page：2 Pages

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3705-CA

NEMA STEEL METAL BOX

文件：160.66 Kbytes Page：2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

ACAR3705-SB

LPWA/ Sub-GHz Cellular Ceramic Chip Antenna

文件：1.41966 Mbytes Page：11 Pages

ABRACON

IRL3705产品属性

  • 类型

    描述

  • 型号

    IRL3705

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-220AB

IRL3705供应商更多...

更新时间：2025-10-3 19:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市昌和盛利电子有限公司
IRL3705ZPBF
IR
NEW
TO-220AB
8238
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市华睿芯科技有限公司
IRL3705ZSTRLPBF
IR
24+
TO-263
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市星宇佳科技有限公司
IRL3705ZSTRLPBF
INFINEON/英飞凌
20+
TO-263
6400
询价
深圳市拓亿芯电子有限公司
IRL3705ZPBF
IR
23+
TO-220
22000
原装现货假一罚十
询价
深圳市明嘉莱科技有限公司
IRL3705ZPBF
IR
25+
NA
880000
明嘉莱只做原装正品现货
询价
深圳市凯睿晟科技有限公司
IRL3705ZSTRPBF
IR
21+
TO-263
30000
百域芯优势 实单必成 可开13点增值税
询价
深圳市振宏微科技有限公司
IRL3705ZS
IR
23+
TO-220
5000
专做原装正品,假一罚百!
询价
深圳市华斯顿科技有限公司
IRL3705ZSTRLPBF
IR
25+23+
TO263
14117
绝对原装正品全新进口深圳现货
询价
深圳市胜彬电子有限公司
IRL3705ZSTRLPBF
IR
22+
D2-pak
8000
原装正品支持实单
询价
深圳市恒凯威科技开发有限公司
IRL3705ZPBF
IR/国际整流器
21+
TO-220
10000
只做原装,质量保证
询价

IRL3705芯片相关品牌

IRL3705规格书下载地址

IRL3705参数引脚图相关

IRL3705数据表相关新闻

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