HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex

ADVANCED PROCESS TECHNOLOGY

文件：487.11 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：316.38 Kbytes Page：2 Pages

ADVANCED PROCESS TECHNOLOGY

文件：487.11 Kbytes Page：9 Pages

ROTARY MOTION | PRECISION SENSOR

Features • Bushing Mount / Sleeve Bearing • 7/8” to 1-3/4” Diameter Bushing Mount • Wirewound 3, 5 and 10-Turn Precision Potentiometers

NEMA SHEET METAL BOX

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NEMA STEEL METAL BOX

文件：160.66 Kbytes Page：2 Pages

NEMA STEEL METAL BOX

文件：160.66 Kbytes Page：2 Pages

LPWA/ Sub-GHz Cellular Ceramic Chip Antenna

文件：1.41966 Mbytes Page：11 Pages