IRL3705Z价格

参考价格:¥7.2474

型号:IRL3705ZLPBF 品牌:International 备注:这里有IRL3705Z多少钱,2025年最近7天走势,今日出价,今日竞价,IRL3705Z批发/采购报价,IRL3705Z行情走势销售排行榜,IRL3705Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL3705Z

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRL3705Z

N-Channel MOSFET Transistor

文件:338.96 Kbytes Page:2 Pages

ISC

无锡固电

IRL3705Z

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

Infineon

英飞凌

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-262 封装

Infineon

英飞凌

ADVANCED PROCESS TECHNOLOGY

文件:382.97 Kbytes Page:12 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:382.97 Kbytes Page:12 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:299.88 Kbytes Page:2 Pages

ISC

无锡固电

采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

ROTARY MOTION | PRECISION SENSOR

Features • Bushing Mount / Sleeve Bearing • 7/8” to 1-3/4” Diameter Bushing Mount • Wirewound 3, 5 and 10-Turn Precision Potentiometers

Sensata

森萨塔

NEMA SHEET METAL BOX

文件:160.45 Kbytes Page:2 Pages

BUD

NEMA STEEL METAL BOX

文件:160.66 Kbytes Page:2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

NEMA STEEL METAL BOX

文件:160.66 Kbytes Page:2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

LPWA/ Sub-GHz Cellular Ceramic Chip Antenna

文件:1.41966 Mbytes Page:11 Pages

ABRACON

IRL3705Z产品属性

  • 类型

    描述

  • 型号

    IRL3705Z

  • 功能描述

    MOSFET N-CH 55V 75A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-10-3 19:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
NEW
TO-220AB
8238
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
24+
TO-263
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
INFINEON/英飞凌
20+
TO-263
6400
IR
23+
TO-220
22000
原装现货假一罚十
IR
25+
NA
880000
明嘉莱只做原装正品现货
IR
21+
TO-263
30000
百域芯优势 实单必成 可开13点增值税
IR
23+
TO-220
5000
专做原装正品,假一罚百!
IR
25+23+
TO263
14117
绝对原装正品全新进口深圳现货
IR
22+
D2-pak
8000
原装正品支持实单
IR/国际整流器
21+
TO-220
10000
只做原装,质量保证

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