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IRL3705Z中文资料
IRL3705Z数据手册规格书PDF详情
VDSS = 55V
RDS(on) = 8.0mΩ
ID = 75A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
Features
● Logic Level
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
IRL3705Z产品属性
- 类型
描述
- 型号
IRL3705Z
- 功能描述
MOSFET N-CH 55V 75A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
19+ |
TO-263 |
57325 |
||||
IR |
24+ |
TO220 |
8950 |
BOM配单专家,发货快,价格低 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价IRL3705ZPBF即刻询购立享优惠#长期有货 |
|||
IR |
16+/17+ |
TO-220 |
3500 |
原装正品现货供应56 |
|||
IR |
23+ |
TO-220AB |
65400 |
||||
INFINEON/IR |
14+/16+ |
2200 |
PG-TO262-3 |
||||
原厂原包 |
24+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
|||
IR |
23+ |
TO262-3 |
24400 |
正规渠道,只有原装! |
IRL3705ZSTRLPBF 价格
参考价格：￥5.2544
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