VDSS = 55V

RDS(on) = 8.0mΩ

ID = 75A

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other applications.

Features

● Logic Level

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

● Lead-Free