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IRGR3B60KD价格
参考价格：￥7.1237
型号：IRGR3B60KD2PBF 品牌：IR 备注：这里有IRGR3B60KD多少钱，2025年最近7天走势，今日出价，今日竞价，IRGR3B60KD批发/采购报价，IRGR3B60KD行情走势销售排行榜，IRGR3B60KD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Drives 1 x 70W HID lamp Overview The IRPLHID2A reference design kit consists of a complete ballast solution for a 70W HID lamp. The design contains an EMI filter, low voltage power supply, active power factor correction and a ballast control circuit using the IRS2573D. This demo board is intended to help with the evalua | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：257.47 Kbytes Page：13 Pages | IRF | | ||
600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package. | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：318.84 Kbytes Page：14 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：318.84 Kbytes Page：14 Pages | IRF | |
IRGR3B60KD产品属性
- 类型
描述
- 型号
IRGR3B60KD
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF |
25+ |
TO252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
21+ |
DPAK |
10000 |
原装现货假一罚十 |
|||
Infineon(英飞凌) |
21+ |
TO-252 |
50 |
原装现货,假一罚十 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IR |
23+ |
DPAK |
50000 |
全新原装正品现货,支持订货 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
INFINEON |
16+ |
TO-252 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon Technologies |
22+ |
DPak |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
22+ |
TO-252 |
20000 |
公司只做原装 品质保障 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
IRGR3B60KD规格书下载地址
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DdatasheetPDF页码索引
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