位置：首页 > IC中文资料第4600页 > IRGR3B60KD2TRRP
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGR3B60KD2TRRP | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF |   | |
Drives 1 x 70W HID lamp Overview The IRPLHID2A reference design kit consists of a complete ballast solution for a 70W HID lamp. The design contains an EMI filter, low voltage power supply, active power factor correction and a ballast control circuit using the IRS2573D. This demo board is intended to help with the evalua | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：257.47 Kbytes Page：13 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | |
IRGR3B60KD2TRRP产品属性
- 类型
描述
- 型号
IRGR3B60KD2TRRP
- 功能描述
IGBT 模块
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
1740 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
25+23+ |
TO252 |
75192 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
IR |
23+ |
DPAK |
6000 |
原装正品，支持实单 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
INFINEON/英飞凌 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON/英飞凌 |
25+ |
TO252 |
32360 |
INFINEON/英飞凌全新特价IRGR3B60KD2TRRP即刻询购立享优惠#长期有货 |
|||
IRF |
23+ |
TO252 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IRF |
13+ |
TO252 |
1740 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
24+ |
TO252 |
60000 |
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IRGR3B60KD2TRRP规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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