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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGR3B60KD2TRRP | INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru | IRF International Rectifier |  |   |
Drives1x70WHIDlamp Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件：257.47 Kbytes Page：13 Pages | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru | IRF International Rectifier | | |
IRGR3B60KD2TRRP产品属性
- 类型
描述
- 型号
IRGR3B60KD2TRRP
- 功能描述
IGBT 模块
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
22+ |
DPak |
9000 |
原厂渠道,现货配单 |
|||
IR |
2022+ |
TO252 |
20000 |
只做原装进口现货.假一罚十 |
|||
IR |
TO252 |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon Technologies |
21+ |
D-Pak |
3000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
IRF |
23+ |
TO252 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
INFINEON/英飞凌 |
24+ |
TO252 |
60000 |
||||
INFINEON/英飞凌 |
25+ |
TO252 |
32360 |
INFINEON/英飞凌全新特价IRGR3B60KD2TRRP即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO252 |
9860 |
原装现货/放心购买 |
|||
INFINEON/英飞凌 |
2022+ |
D-PAK(TO |
6600 |
只做原装,假一罚十,长期供货。 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
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IRGR3B60KD2TRRP规格书下载地址
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属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
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