型号 功能描述 生产厂家&企业 LOGO 操作
IRGR3B60KD2TRRP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Drives1x70WHIDlamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

文件:257.47 Kbytes Page:13 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRGR3B60KD2TRRP产品属性

  • 类型

    描述

  • 型号

    IRGR3B60KD2TRRP

  • 功能描述

    IGBT 模块

  • RoHS

  • 制造商

    Infineon Technologies

  • 产品

    IGBT Silicon Modules

  • 配置

    Dual 集电极—发射极最大电压

  • VCEO

    600 V

  • 集电极—射极饱和电压

    1.95 V 在25

  • C的连续集电极电流

    230 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    445 W

  • 最大工作温度

    + 125 C

  • 封装/箱体

    34MM

更新时间:2024-5-16 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+23+
TO252
75192
绝对原装正品现货,全新深圳原装进口现货
IR
22+
NA
68932
全新原装正品现货
IR
TO252
9850
一级代理 原装正品假一罚十价格优势长期供货
IR
新批次
TO252
4326
INFINEON/英飞凌
TO252
265209
假一罚十原包原标签常备现货!
INFINEON-英飞凌
24+25+/26+27+
TO-252-3
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
IR
2018+
TO252
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
IR
23+
DPAK
6000
原装正品,支持实单
IRF
23+
TO252
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
23+
DPAK
12300
全新原装真实库存含13点增值税票!

IRGR3B60KD2TRRP芯片相关品牌

  • AVAGO
  • DAESAN
  • HONEYWELL-ACC
  • HUBERSUHNER
  • IXYS
  • LITEON
  • Micron
  • MMD
  • NJSEMI
  • ROSENBERGER
  • Vicor
  • WALL

IRGR3B60KD2TRRP数据表相关新闻