IRGR3B60KD2价格

参考价格:¥7.1237

型号:IRGR3B60KD2PBF 品牌:IR 备注:这里有IRGR3B60KD2多少钱,2025年最近7天走势,今日出价,今日竞价,IRGR3B60KD2批发/采购报价,IRGR3B60KD2行情走势销售排行榜,IRGR3B60KD2报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRGR3B60KD2

Drives 1 x 70W HID lamp

Overview The IRPLHID2A reference design kit consists of a complete ballast solution for a 70W HID lamp. The design contains an EMI filter, low voltage power supply, active power factor correction and a ballast control circuit using the IRS2573D. This demo board is intended to help with the evalua

IRF

IRGR3B60KD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:257.47 Kbytes Page:13 Pages

IRF

IRGR3B60KD2

600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:318.84 Kbytes Page:14 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:318.84 Kbytes Page:14 Pages

IRF

IRGR3B60KD2产品属性

  • 类型

    描述

  • 型号

    IRGR3B60KD2

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

更新时间:2025-10-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO-252
2669
原厂订货渠道,支持BOM配单一站式服务
IR
24+
NA/
53250
原装现货,当天可交货,原型号开票
IR
22+
SOT-252
100000
代理渠道/只做原装/可含税
IR
24+
TO-252
3664
只做原厂渠道 可追溯货源
IR
24+
TO-252
242
IR
25+
TO-252
50000
全新原装正品支持含税
I
23+
SOT-252
6000
原装正品,支持实单
IR
2023+
D2-PAK
50000
原装现货
IR
23+
D2-PAK
7300
专注配单,只做原装进口现货
IR
23+
D-Pak
7000

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