IRG4PH40UD芯片数据手册批发采购价格英飞凌-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

IRG4PH40价格

参考价格：￥9.4226

型号：IRG4PH40KDPBF 品牌：INTERNATIONAL RECTIFIER 备注：这里有IRG4PH40多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4PH40批发/采购报价，IRG4PH40行情走势销售排行榜，IRG4PH40报价。

型号	功能描述	生产厂家企业	LOGO
IRG4PH40K	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g	IRF	IRF
IRG4PH40KD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE	IRF	IRF
IRG4PH40KDPBF	INSUALATED GATE BIPOLAR TRANSISTOR WITH YLTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE	IRF	IRF
IRG4PH40KPBF	Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g	IRF	IRF
IRG4PH40U	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and	IRF	IRF
IRG4PH40UD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult	IRF	IRF
IRG4PH40UD2	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for medium operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFRED™ ultrafast, u	IRF	IRF
IRG4PH40UD2-E	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in resonant circuit • Industry standard TO-247AD package with extended leads Benefits • Hi	IRF	IRF
IRG4PH40UD2-EP	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F	IRF	IRF
IRG4PH40UD2-EP	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F	IRF	IRF
IRG4PH40UD2-EPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F	IRF	IRF
IRG4PH40UD2PBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult	IRF	IRF
IRG4PH40UDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult	IRF	IRF
IRG4PH40UPBF	Ultra Fast Speed IGBT Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and	IRF	IRF
IRG4PH40FD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PH40KD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PH40KD	1200V 超快 4-20 kHz Copack IGBT，采用 TO-247AC 封装	INFINEON 英飞凌	INFINEON
IRG4PH40KDPBF	封装/外壳：TO-247-3 包装：卷带（TR）描述：IGBT 1200V 30A 160W TO247AC 分立半导体产品晶体管 - UGBT、MOSFET - 单	INFINEON 英飞凌	INFINEON
IRG4PH40KDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：754.94 Kbytes Page：11 Pages	IRF	IRF
IRG4PH40KDPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：754.94 Kbytes Page：11 Pages	IRF	IRF
IRG4PH40KPBF	INSULATED GATE BIPOLAR TRANSISTOR 文件：536.29 Kbytes Page：9 Pages	IRF	IRF
IRG4PH40KPBF	封装/外壳：TO-247-3 包装：卷带（TR）描述：IGBT 1200V 30A 160W TO247AC 分立半导体产品晶体管 - UGBT、MOSFET - 单	INFINEON 英飞凌	INFINEON
IRG4PH40KPBF_15	INSULATED GATE BIPOLAR TRANSISTOR 文件：536.29 Kbytes Page：9 Pages	IRF	IRF
IRG4PH40MD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PH40SD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PH40U	1200V 超快 5-40 kHz 分立 IGBT，采用 TO-247AC 封装	INFINEON 英飞凌	INFINEON
IRG4PH40UD	1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package	INFINEON 英飞凌	INFINEON
IRG4PH40UD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4PH40UD2-EPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：240.21 Kbytes Page：11 Pages	IRF	IRF
IRG4PH40UD2-EPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：240.21 Kbytes Page：11 Pages	IRF	IRF
IRG4PH40UDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：261.23 Kbytes Page：10 Pages	IRF	IRF
IRG4PH40UDPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：261.23 Kbytes Page：10 Pages	IRF	IRF
IRG4PH40UPBF	INSULATED GATE BIPOLAR TRANSISTOR 文件：620.64 Kbytes Page：9 Pages	IRF	IRF
IRG4PH40UPBF_15	INSULATED GATE BIPOLAR TRANSISTOR 文件：620.64 Kbytes Page：9 Pages	IRF	IRF
4PH40	SINGLE-PHASE FULL WAVE BRIDGE 4 AMPERES FOR P.C. BOARD AND HEAT SINK MOUNTING 文件：40.59 Kbytes Page：2 Pages	EDI	EDI

IRG4PH40产品属性

类型
描述
Technology ：
IGBT Gen 4
Switching Frequency min max：
8.0kHz 30.0kHz
Package ：
TO-247
Voltage Class max：
1200.0V
IC(@100°) max：
15.0A
IC(@25°) max：
30.0A
ICpuls max：
60.0A
Ptot max：
160.0W
VCE(sat) ：
2.74V
Eon ：
0.73mJ
Eoff(Hard Switching) ：
1.66mJ
td(on) ：
29.0ns
tr ：
24.0ns
td(off) ：
870.0ns
tf ：
330.0ns
QGate ：
86.0nC
Ets (max)：
2.39mJ (2.9mJ)
Switching Frequency ：
Gen 4 8-30 kHz
VCE max：
1200.0V

IRG4PH40供应商更多...

更新时间：2026-7-23 17:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	IRG4PH40UDPBF	Infineon(英飞凌)	25+	TO-247AC	22412	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市赛尔通科技有限公司	IRG4PH40UD-2EP	IR	23+	TO-274AA	65400		询价
深圳市一线半导体有限公司	IRG2511Q	IR	24+	TO-3P	1070		询价
深圳市富利微电子科技有限公司	IRG4PH40UDPBF	IR	26+	TO-247	20540	保证进口原装现货假一赔十	询价
深圳博中泰实业有限公司	IRG1330U	INFINEON/英飞凌	25+	TO220	20000	本公司只做全新原装正品	询价
深圳市富芯乐电子科技有限公司	IRG20B120UD-E	IR	24+	NA	4500	只做原装正品现货欢迎来电查询15919825718	询价
中天科工半导体（深圳）有限公司	IRG4PH40UDPBF	INFINEON/英飞凌	25+	TO-247	32360	INFINEON/英飞凌全新特价IRG4PH40UDPBF即刻询购立享优惠#长期有货	询价
深圳市金华微盛电子有限公司	IRG4PH40UDPBF	IR	19+	TO-3P	18000		询价
深圳市东来宝电子科技有限公司	IRG1330U	INFINEON/英飞凌	24+	TO220	39197	郑重承诺只做原装进口现货	询价
深圳市美思瑞电子科技有限公司	IRG1330U	IR	22+	TO220	12245	现货,原厂原装假一罚十!	询价

IRG4PH40芯片相关品牌

IRG4PH40规格书下载地址

IRG4PH40参数引脚图相关

IRG4PH40数据表相关新闻

IRGP4266D-EPBF
IRGP4266D-EPBF
2023-12-11
IRFZ44NSTRLPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-24
IRG4PC40KPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-23
IRG4PC50WPBF
属性参数值商品目录 IGBT管集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
2020-10-27
IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装用芯服务；
2020-7-17
IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
2020-1-12

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109
P110

找IC，尽在114IC

IRG4PH40价格

IRG4PH40产品属性

IRG4PH40供应商更多...

IRG4PH40芯片相关品牌

IRG4PH40规格书下载地址

IRG4PH40参数引脚图相关

IRG4PH40数据表相关新闻

IRGP4266D-EPBF

IRFZ44NSTRLPBF 原装正品.仓库现货

IRG4PC40KPBF 原装正品.仓库现货

IRG4PC50WPBF

IRGB15B60KDPBF IR全新正品现货

IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04

DdatasheetPDF页码索引