INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

1200V 超快 4-20 kHz Copack IGBT，采用 TO-247AC 封装

INSUALATED GATE BIPOLAR TRANSISTOR WITH YLTRAFAST SOFT RECOVERY DIODE

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：754.94 Kbytes Page：11 Pages

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 30A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：754.94 Kbytes Page：11 Pages

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

SINGLE-PHASE FULL WAVE BRIDGE 4 AMPERES FOR P.C. BOARD AND HEAT SINK MOUNTING

文件：40.59 Kbytes Page：2 Pages