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IRG4PH40UD2-EP价格
参考价格：￥13.3935
型号：IRG4PH40UD2-EP 品牌：International 备注：这里有IRG4PH40UD2-EP多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PH40UD2-EP批发/采购报价，IRG4PH40UD2-EP行情走势销售排行榜，IRG4PH40UD2-EP报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PH40UD2-EP | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F | IRF |   | |
IRG4PH40UD2-EP | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F | IRF | | |
IRG4PH40UD2-EP | 封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 41A TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for medium operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFRED™ ultrafast, u | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：240.21 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：240.21 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in resonant circuit • Industry standard TO-247AD package with extended leads Benefits • Hi | IRF | |
IRG4PH40UD2-EP产品属性
- 类型
描述
- 型号
IRG4PH40UD2-EP
- 功能描述
IGBT 晶体管 1200V UltraFast 5-40kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2406+ |
TO247 |
11260 |
诚信经营!进口原装!量大价优! |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
32360 |
INFINEON/英飞凌全新特价IRG4PH40UD2-EP即刻询购立享优惠#长期有货 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
TO247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IR |
24+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
2023+ |
TO-247 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
IR |
17+ |
TO-247 |
6200 |
100%原装正品现货 |
|||
IR |
23+ |
TO247 |
82973627 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
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IRG4PH40UD2-EP规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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