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位置：首页 > IC中文资料 > IRG4PH40UD

IRG4PH40UD价格

参考价格：￥13.3935

型号：IRG4PH40UD2-EP 品牌：International 备注：这里有IRG4PH40UD多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4PH40UD批发/采购报价，IRG4PH40UD行情走势销售排行榜，IRG4PH40UD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PH40UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

IRG4PH40UD

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4PH40UD

1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package

INFINEON

英飞凌

IRG4PH40UD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for medium operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFRED™ ultrafast, u

IRF

IRG4PH40UD2-E

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in resonant circuit • Industry standard TO-247AD package with extended leads Benefits • Hi

IRF

IRG4PH40UD2-E

1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package

Copacked 1200V IGBT in a TO-247AD package with ultrafast 5-40 kHz soft recovery diode. • Ultrafast IGBT optimized for high operating frequencies up to 200 kHz in resonant mode\n• IGBT copackaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diode for use in resonant circuits\n• Industry standard TO-247AD package with extended leads\n• Lead-free\n\n优势:\n• Higher switching ;

INFINEON

英飞凌

IRG4PH40UD2-EP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F

IRF

IRG4PH40UD2-EP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F

IRF

IRG4PH40UD2-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F

IRF

IRG4PH40UD2PBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

IRG4PH40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult

IRF

IRG4PH40UD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INFINEON

英飞凌

IRG4PH40UD2-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：240.21 Kbytes Page：11 Pages

IRF

IRG4PH40UD2-EPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：240.21 Kbytes Page：11 Pages

IRF

IRG4PH40UD-EPBF

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 41A 160W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

IRG4PH40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：261.23 Kbytes Page：10 Pages

IRF

IRG4PH40UDPBF

封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 41A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

IRG4PH40UDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：261.23 Kbytes Page：10 Pages

IRF

IRG4PH40K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g

IRF

IRG4PH40KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE

IRF

IRG4PH40U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)

Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and

IRF

4PH40

SINGLE-PHASE FULL WAVE BRIDGE 4 AMPERES FOR P.C. BOARD AND HEAT SINK MOUNTING

文件：40.59 Kbytes Page：2 Pages

EDI

IRG4PH40UD产品属性

  • 类型

    描述

  • Technology ：

    IGBT Gen 4

  • Switching Frequency min max：

    8.0kHz 30.0kHz

  • Package ：

    TO-247

  • Voltage Class max：

    1200.0V

  • IC(@100°) max：

    21.0A

  • IC(@25°) max：

    41.0A

  • ICpuls max：

    82.0A

  • Ptot max：

    160.0W

  • VCE(sat) ：

    2.43V 

  • Eon ：

    1.8mJ 

  • Eoff(Hard Switching) ：

    1.93mJ 

  • td(on) ：

    46.0ns 

  • tr ：

    35.0ns 

  • td(off) ：

    97.0ns 

  • tf ：

    240.0ns 

  • QGate ：

    86.0nC 

  • IF max：

    130.0A

  • VF ：

    2.6V 

  • Qrr ：

    80.0nC 

  • Irrm ：

    4.5A 

  • Ets  (max)：

    1.1mJ (1.5mJ)

  • VCE max：

    1200.0V

IRG4PH40UD供应商更多...

更新时间：2026-8-1 9:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市卓越微芯电子有限公司
IRG4PH40UDPBF
IR
25+
TO-247
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
中天科工半导体（深圳）有限公司
IRG4PH40UDPBF
INFINEON/英飞凌
25+
TO-247
32360
INFINEON/英飞凌全新特价IRG4PH40UDPBF即刻询购立享优惠#长期有货
询价
瀚佳科技(深圳)有限公司
IRG1330U
IR
24+
TO220
65200
一级代理/放心采购
询价
柒号芯城电子商务(深圳)有限公司
IRG4PH40UDPBF
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
深圳市宏世佳电子科技有限公司
IRG20B120UD
IR
2025+
TO-3P
4675
全新原厂原装产品、公司现货销售
询价
天津市博通航睿技术有限公司
IRG1020VH
IR
23+
7000
询价
深圳市金芯阳科技有限公司
IRG4PH40UD2-EP
IR
15+
原厂原装
4800
进口原装现货假一赔十
询价
京海半导体(深圳)有限公司
IRG10CU
IR
25+
SOP8
10000
原装现货假一罚十
询价
深圳市凌旭科技有限公司
IRG1330U
IR
2016+
TO220
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
深圳市柯尔基电子有限公司
IRG4PH40UD2-EP
INFINEON/英飞凌
26+
TO-247
9865
原装正品,专业分销IGBT管
询价

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