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IRG4PH40U价格
参考价格：￥13.3935
型号：IRG4PH40UD2-EP 品牌：International 备注：这里有IRG4PH40U多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PH40U批发/采购报价，IRG4PH40U行情走势销售排行榜，IRG4PH40U报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PH40U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and | IRF |   | |
IRG4PH40U | 1200V 超快 5-40 kHz 分立 IGBT，采用 TO-247AC 封装 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for medium operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFRED™ ultrafast, u | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in resonant circuit • Industry standard TO-247AD package with extended leads Benefits • Hi | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult | IRF | | ||
Ultra Fast Speed IGBT Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | Infineon 英飞凌 | | ||
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：240.21 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：240.21 Kbytes Page：11 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 41A 160W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：261.23 Kbytes Page：10 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 41A 160W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：261.23 Kbytes Page：10 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：620.64 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：620.64 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
SINGLE-PHASE FULL WAVE BRIDGE 4 AMPERES FOR P.C. BOARD AND HEAT SINK MOUNTING 文件：40.59 Kbytes Page：2 Pages | edi | |
IRG4PH40U产品属性
- 类型
描述
- 型号
IRG4PH40U
- 制造商
International Rectifier
- 功能描述
IGBT TO-247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-247 |
4524 |
原厂直供,支持账期,免费供样,技术支持 |
|||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
22+ |
TO-247 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
32360 |
INFINEON/英飞凌全新特价IRG4PH40UDPBF即刻询购立享优惠#长期有货 |
|||
IR |
21+ |
TO-247 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
IR |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon Technologies |
22+ |
TO247AC |
9000 |
原厂渠道,现货配单 |
|||
IR |
247 |
13 |
42 |
||||
IR |
23+ |
TO247 |
82973627 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
IRG4PH40U芯片相关品牌
IRG4PH40U规格书下载地址
IRG4PH40U参数引脚图相关
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- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
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- IRFZ46L
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- IRFZ45
- IRFZ44Z
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- IRFZ44N
- IRFZ44L
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IRG4PH40U数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
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2020-1-12
DdatasheetPDF页码索引
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