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IRG4PF50WPB价格
参考价格：￥15.0088
型号：IRG4PF50WPBF 品牌：INTERNATIONAL 备注：这里有IRG4PF50WPB多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PF50WPB批发/采购报价，IRG4PF50WPB行情走势销售排行榜，IRG4PF50WPB报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • Reduction in | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：654.43 Kbytes Page：9 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 900V 51A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：654.43 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • | IRF | | ||
IGBT DESCRIPTION · Low Gate Drive Requirement · High Current Handling Capability · Short Circuit Capability · High Power Density APPLICATIONS · Power Inverters · Motor Drives · UPS,PFC · High Voltage Auxiliaries | ISC 无锡固电 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct | IRF | |
IRG4PF50WPB产品属性
- 类型
描述
- 型号
IRG4PF50WPB
- 功能描述
IGBT 晶体管 900V Warp 20-100kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-247 |
32360 |
INFINEON/英飞凌全新特价IRG4PF50WPBF即刻询购立享优惠#长期有货 |
|||
VISHAY |
24+ |
TO-247 |
12000 |
VISHAY专营进口原装现货假一赔十 |
|||
IR |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
Infineon/英飞凌 |
24+ |
TO-247(AC) |
6000 |
全新原装深圳仓库现货有单必成 |
|||
IR/国际整流器 |
2021+ |
TO-247 |
7600 |
原装现货，欢迎询价 |
|||
IR |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR(国际整流器) |
24+ |
N/A |
22048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
Infineon(英飞凌) |
24+ |
TO-247 |
924 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
IR |
23+ |
TO-247 |
65400 |
||||
INFINEON进口 |
22+ |
TO-247 |
8113 |
原装正品现货假一罚十 |
IRG4PF50WPB芯片相关品牌
IRG4PF50WPB规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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