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IRG4PF50W价格
参考价格：￥19.9216
型号：IRG4PF50WDPBF 品牌：INTERNATIONAL 备注：这里有IRG4PF50W多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PF50W批发/采购报价，IRG4PF50W行情走势销售排行榜，IRG4PF50W报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PF50W | INSULATED GATE BIPOLAR TRANSISTOR VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • | IRF |   | |
IRG4PF50W | IGBT DESCRIPTION · Low Gate Drive Requirement · High Current Handling Capability · Short Circuit Capability · High Power Density APPLICATIONS · Power Inverters · Motor Drives · UPS,PFC · High Voltage Auxiliaries | ISC 无锡固电 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • Reduction in | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：637.39 Kbytes Page：11 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 900V 51A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：637.39 Kbytes Page：11 Pages | IRF | | ||
封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 900V 51A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：654.43 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：654.43 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct | IRF | |
IRG4PF50W产品属性
- 类型
描述
- 型号
IRG4PF50W
- 制造商
International Rectifier
- 功能描述
IGBT TO-247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
03+ |
TO-247 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
23+ |
TO-247AC |
19838 |
专注原装正品现货特价中量大可定 |
||||
IR |
24+ |
TO 247 |
160989 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
TO-247 |
65400 |
||||
INFINEON/英飞凌 |
07+ |
TO-247 |
5 |
深圳原装无铅现货 |
|||
IR |
24+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
|||
IR(国际整流器) |
24+ |
N/A |
22048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
25+23+ |
TO-247 |
24524 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON进口 |
22+ |
TO-247 |
8113 |
原装正品现货假一罚十 |
|||
IR |
24+ |
TO-247 |
5 |
只做原厂渠道 可追溯货源 |
IRG4PF50W芯片相关品牌
IRG4PF50W规格书下载地址
IRG4PF50W参数引脚图相关
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IRG4PF50W数据表相关新闻
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DdatasheetPDF页码索引
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