位置:G4PF50W > G4PF50W详情

G4PF50W中文资料

厂家型号

G4PF50W

文件大小

138.73Kbytes

页面数量

8

功能描述

INSULATED GATE BIPOLAR TRANSISTOR

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

G4PF50W数据手册规格书PDF详情

VCES = 900V

VCE(on) typ. = 2.25V

@VGE = 15V, IC = 28A

Benefits

• Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz

• Of particular benefit in single-ended converters and Power Supplies 150W and higher

• Reduction in critical Eoff parameter due to minimal minority-carrier recombination coupled with low on state losses allow maximum flexibility in device application

Features

• Optimized for use in Welding and Switch-Mode Power Supply applications

• Industry benchmark switching losses improve efficiency of all power supply topologies

• 50 reduction of Eoff parameter

• Low IGBT conduction losses

• Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

更新时间:2025-10-6 16:17:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
25+
TO-3P
18000
原厂直接发货进口原装
IR
23+
TO-247
1520
绝对全新原装!优势供货渠道!特价!请放心订购!
IR
23+
TO-3P
5000
原装正品,假一罚十
IR
12+
TO-247
2500
原装现货/特价
23+
TO-3P
65480
IR
24+
TO-247
36500
原装现货/放心购买
IR
23+
TO-247
50000
全新原装正品现货,支持订货
IR
22+
TO-247
6000
十年配单,只做原装
IR
22+
TO-247
12245
现货,原厂原装假一罚十!
IR
24+
NA/
115
优势代理渠道,原装正品,可全系列订货开增值税票