IRG4PF50WPBF价格

参考价格:¥15.0088

型号:IRG4PF50WPBF 品牌:INTERNATIONAL 备注:这里有IRG4PF50WPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4PF50WPBF批发/采购报价,IRG4PF50WPBF行情走势销售排行榜,IRG4PF50WPBF报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRG4PF50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • Reduction in

IRF

IRG4PF50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

文件:654.43 Kbytes Page:9 Pages

IRF

IRG4PF50WPBF

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 900V 51A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

文件:654.43 Kbytes Page:9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher •

IRF

IGBT

DESCRIPTION · Low Gate Drive Requirement · High Current Handling Capability · Short Circuit Capability · High Power Density APPLICATIONS · Power Inverters · Motor Drives · UPS,PFC · High Voltage Auxiliaries

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct

IRF

INSULATED GATE BIPOLAR TRANSISTOR

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher •

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct

IRF

IRG4PF50WPBF产品属性

  • 类型

    描述

  • 型号

    IRG4PF50WPBF

  • 功能描述

    IGBT 晶体管 900V Warp 20-100kHz

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-17 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO-247
924
原厂订货渠道,支持BOM配单一站式服务
IR
24+
TO-247
20540
保证进口原装现货假一赔十
2017+
TO-3P
28562
只做原装正品假一赔十!
INFINEON/英飞凌
07+
TO-247
5
深圳原装无铅现货
IR(国际整流器)
24+
N/A
22048
原厂可订货,技术支持,直接渠道。可签保供合同
INFINEON进口
22+
TO-247
8113
原装正品现货假一罚十
IR/国际整流器
21+
TO-247
10000
只做原装,质量保证
IR
24+
TO-247
5
只做原厂渠道 可追溯货源
IR
24+
TO-247
15780
VISHAY
24+
TO-247
12000
VISHAY专营进口原装现货假一赔十

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