IRG4PC50F价格

参考价格:¥27.8063

型号:IRG4PC50FD-EPBF 品牌:International 备注:这里有IRG4PC50F多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4PC50F批发/采购报价,IRG4PC50F行情走势销售排行榜,IRG4PC50F报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PC50F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard

IRF

IRG4PC50F

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4PC50F

600V 快速 1-8 kHz 分立 IGBT,采用 TO-247AC 封装

Infineon

英飞凌

N-Channel IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.6V@IC= 39A · High Current Capability · High Input Impedance · Low Conduction Loss APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AD package • Lead-Free Benefits •

IRF

Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR

Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR

IRF

IGBT

DESCRIPTION · Low Gate Drive Requirement · High Current Handling Capability · Short Circuit Capability · High Power Density APPLICATIONS · Power Inverters · Motor Drives · UPS,PFC · High Voltage Auxiliaries

ISC

无锡固电

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:763.7 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Infineon

英飞凌

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 70A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:763.7 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:763.7 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:762.74 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:763.7 Kbytes Page:11 Pages

IRF

Gen 4 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package

Infineon

英飞凌

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 70A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR

文件:329.46 Kbytes Page:8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:329.46 Kbytes Page:8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:313.65 Kbytes Page:9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:313.65 Kbytes Page:9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design

IRF

IRG4PC50F产品属性

  • 类型

    描述

  • 型号

    IRG4PC50F

  • 制造商

    International Rectifier

  • 功能描述

    IGBT TO-247

更新时间:2025-9-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
INFINEON/英飞凌
22+
TO-247
100000
代理渠道/只做原装/可含税
TR
20+
TO-247
35830
原装优势主营型号-可开原型号增税票
IR
21+
TO-247
6880
只做原装,质量保证
IR
02+
TO-247
172
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/IR
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
IR
24+
TO-247AC
27500
原装正品,价格最低!
INFINEON
24+
n/a
25836
新到现货,只做原装进口
INFINEON/英飞凌
23+
TO-247AC
43400
原厂授权一级代理,专业海外优势订货,价格优势、品种

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