INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated UltraFast IGBT

Features

●Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE= 15V

●Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

●IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations

●Industry standard TO-247AC package

Benefits

●Generation 4 IGBTs offer highest efficiencies available

●HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing

●Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs