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IRG4PC50U价格
参考价格：￥28.6535
型号：IRG4PC50UD-EPBF 品牌：INTERNATIONAL 备注：这里有IRG4PC50U多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC50U批发/采购报价，IRG4PC50U行情走势销售排行榜，IRG4PC50U报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PC50U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan | IRF |   | |
IRG4PC50U | Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | |
IRG4PC50U | 封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 55A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
IRG4PC50U | 600V 超快 8-60 kHz 分立 IGBT，采用 TO-247AC 封装 | Infineon 英飞凌 | | |
IGBT DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.0V@IC=27A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Induction Heating,UPS ·AC & DC motor controls and general purpose inverters | ISC 无锡固电 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package | Infineon 英飞凌 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 55A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：697.54 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：697.54 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：641.2 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：641.2 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design | IRF | |
IRG4PC50U产品属性
- 类型
描述
- 型号
IRG4PC50U
- 功能描述
IGBT UFAST 600V 55A TO-247AC
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-247AC |
12000 |
全新原装假一赔十 |
|||
IR |
24+ |
TO 3P |
160899 |
明嘉莱只做原装正品现货 |
|||
IR |
25+ |
TO-247 |
32360 |
IR全新特价IRG4PC50UD即刻询购立享优惠#长期有货 |
|||
IR |
2019 |
TO-247 |
1394 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
24+ |
TO247 |
42000 |
只做原装进口现货 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
24+ |
TO-247AC |
27500 |
原装正品,价格最低! |
|||
IR |
25+ |
管3P |
18000 |
原厂直接发货进口原装 |
|||
INFINEON/英飞凌 |
2450+ |
TO-247AC |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR(国际整流器) |
24+ |
N/A |
9648 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
IRG4PC50U芯片相关品牌
IRG4PC50U规格书下载地址
IRG4PC50U参数引脚图相关
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- l100
- ku波段
- kt250
- kse13005
- ks20
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- k9f1208
- k310
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- k2055
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- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4PH50S-EPBF
- IRG4PH50KPBF
- IRG4PH50KDPBF
- IRG4PH40UPBF
- IRG4PH40UDPBF
- IRG4PH40UD-EPBF
- IRG4PH40UD2-EP
- IRG4PH40KDPBF
- IRG4PH30KPBF
- IRG4PH30KDPBF
- IRG4PH20KPBF
- IRG4PH20KDPBF
- IRG4PF50WPBF
- IRG4PF50WDPBF
- IRG4PC60UPBF
- IRG4PC60FPBF
- IRG4PC50WPBF
- IRG4PC50UPBF
- IRG4PC50UDPBF
- IRG4PC50UD-EPBF
- IRG4PC50SPBF
- IRG4PC50SDPBF
- IRG4PC50KPBF
- IRG4PC50KDPBF
- IRG4PC50FPBF
- IRG4PC50F-EPBF
- IRG4PC50FDPBF
- IRG4PC50FD-EPBF
- IRG4PC40WPBF
- IRG4PC40UPBF
- IRG4PC40UDPBF
- IRG4PC40UD-EPBF
- IRG4PC40SPBF
- IRG4PC40KPBF
- IRG4PC40FPBF
- IRG4PC40FDPBF
- IRG4PC30WPBF
- IRG4PC30UDPBF
- IRG4PC30SPBF
- IRG4PC30KPBF
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4PC50U数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17
DdatasheetPDF页码索引
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