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IRG4PC50U价格
参考价格：￥28.6535
型号：IRG4PC50UD-EPBF 品牌：INTERNATIONAL 备注：这里有IRG4PC50U多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC50U批发/采购报价，IRG4PC50U行情走势销售排行榜，IRG4PC50U报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PC50U | INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan | IRF International Rectifier |  |   |
IRG4PC50U | FitRate/EquivalentDeviceHours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | |
IRG4PC50U | 封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 600V 55A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-pack | IRF International Rectifier | | | |
IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=27A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-pack | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan | IRF International Rectifier | | | |
FitRate/EquivalentDeviceHours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 55A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件：697.54 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件：697.54 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTOR 文件：641.2 Kbytes Page：9 Pages | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTOR 文件：641.2 Kbytes Page：9 Pages | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystandard | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-pack | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign | IRF International Rectifier | | |
IRG4PC50U产品属性
- 类型
描述
- 型号
IRG4PC50U
- 功能描述
IGBT UFAST 600V 55A TO-247AC
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
IR |
06+ |
TO-247 |
2000 |
全新原装 绝对有货 |
|||
IR |
24+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
|||
Infineon Technologies |
22+ |
TO247AC |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
TO-247 |
6000 |
只做原装假一赔十 |
|||
IR |
24+ |
TO-3P |
5620 |
全新原装现货,欢迎询购!! |
|||
IR |
18+ |
247 |
85600 |
保证进口原装可开17%增值税发票 |
|||
IR |
23+ |
TO-247 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
TO-247 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR英飞凌 |
2017 |
TO-247 |
3 |
全新原装正品现货 |
IRG4PC50U芯片相关品牌
IRG4PC50U规格书下载地址
IRG4PC50U参数引脚图相关
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- IRG4PC50UD-EPBF
- IRG4PC50SPBF
- IRG4PC50SDPBF
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- IRG4PC50FPBF
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- IRG4PC50FD-EPBF
- IRG4PC40WPBF
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- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
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- IRFZ48
- IRFZ46Z
- IRFZ46S
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- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
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IRG4PC50U数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
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原装正品现货热卖中，焕盛达-专注原装用芯服务；
2020-7-17
DdatasheetPDF页码索引
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