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IRG4PC50FD价格
参考价格：￥27.8063
型号：IRG4PC50FD-EPBF 品牌：International 备注：这里有IRG4PC50FD多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC50FD批发/采购报价，IRG4PC50FD行情走势销售排行榜，IRG4PC50FD报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PC50FD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa | IRF International Rectifier |  |   |
IRG4PC50FD | N-Channel IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.6V@IC= 39A · High Current Capability · High Input Impedance · Low Conduction Loss APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRG4PC50FD | Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：763.7 Kbytes Page：11 Pages | IRF International Rectifier | | | |
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 70A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 70A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：763.7 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：763.7 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：762.74 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：763.7 Kbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design | IRF International Rectifier | | |
IRG4PC50FD产品属性
- 类型
描述
- 型号
IRG4PC50FD
- 制造商
International Rectifier
- 功能描述
IGBT TO-247
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2025+ |
TO-3P |
4675 |
全新原厂原装产品、公司现货销售 |
|||
TR |
20+ |
TO-247 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
25+ |
TO247 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
24+ |
原厂封装 |
65250 |
支持样品,原装现货,提供技术支持! |
|||
IR |
24+ |
TO-247AC |
27500 |
原装正品,价格最低! |
|||
INTERNATIONA |
05+ |
原厂原装 |
4229 |
只做全新原装真实现货供应 |
|||
IR |
23+ |
TO-247 |
35890 |
||||
IR |
17+ |
TO-247 |
31518 |
原装正品 可含税交易 |
|||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IR |
24+ |
TO-247 |
20000 |
原装正品现货 |
IRG4PC50FD芯片相关品牌
IRG4PC50FD规格书下载地址
IRG4PC50FD参数引脚图相关
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- IRGBF30
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- IRG4PH30KPBF
- IRG4PH30KDPBF
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- IRG4PF50WPBF
- IRG4PF50WDPBF
- IRG4PC60UPBF
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- IRG4PC50WPBF
- IRG4PC50UPBF
- IRG4PC50UDPBF
- IRG4PC50UD-EPBF
- IRG4PC50SPBF
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- IRG4PC50FPBF
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- IRG4PC50FDPBF
- IRG4PC50FD-EPBF
- IRG4PC40WPBF
- IRG4PC40UPBF
- IRG4PC40UDPBF
- IRG4PC40UD-EPBF
- IRG4PC40SPBF
- IRG4PC40KPBF
- IRG4PC40FPBF
- IRG4PC40FDPBF
- IRG4PC30WPBF
- IRG4PC30UDPBF
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- IRG4PC30KDPBF
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- IRG4IBC30WPBF
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- IRG4IBC20WPBF
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
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- IRFZ48
- IRFZ46Z
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- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4PC50FD数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17
DdatasheetPDF页码索引
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