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位置：首页 > IC中文资料第1383页 > IRG4PC50FD

IRG4PC50FD价格

参考价格：￥27.8063

型号：IRG4PC50FD-EPBF 品牌：International 备注：这里有IRG4PC50FD多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC50FD批发/采购报价，IRG4PC50FD行情走势销售排行榜，IRG4PC50FD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PC50FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa

IRF

IRG4PC50FD

N-Channel IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.6V@IC= 39A · High Current Capability · High Input Impedance · Low Conduction Loss APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter

ISC

无锡固电

IRG4PC50FD

600V Fast 1-8 kHz Copack IGBT in a TO-247AC package

Infineon

英飞凌

IRG4PC50FD

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4PC50FD-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：763.7 Kbytes Page：11 Pages

IRF

IRG4PC50FD-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Infineon

英飞凌

IRG4PC50FD-EPBF

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 70A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4PC50FDPBF

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 70A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4PC50FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：763.7 Kbytes Page：11 Pages

IRF

IRG4PC50FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：763.7 Kbytes Page：11 Pages

IRF

IRG4PC50FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：762.74 Kbytes Page：11 Pages

IRF

IRG4PC50FDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：763.7 Kbytes Page：11 Pages

IRF

G4PC50F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard

IRF

G4PC50FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa

IRF

G4PC50U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan

IRF

G4PC50UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack

IRF

G4PC50W

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design

IRF

IRG4PC50FD产品属性

  • 类型

    描述

  • 型号

    IRG4PC50FD

  • 制造商

    International Rectifier

  • 功能描述

    IGBT TO-247

IRG4PC50FD供应商更多...

更新时间：2025-9-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
IRG4PC50FD
IR
24+
NA/
3809
原装现货,当天可交货,原型号开票
询价
中天科工半导体（深圳）有限公司
IRG4PC50FD
TR
20+
TO-247
35830
原装优势主营型号-可开原型号增税票
询价
深圳市恒凯威科技开发有限公司
IRG4PC50FD-EPBF
IR
21+
TO-247
6880
只做原装,质量保证
询价
柒号芯城电子商务(深圳)有限公司
IRG4PC50FD
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
深圳市科达星科技有限公司
IRG4PC50FD
IR
24+
TO-247AC
27500
原装正品,价格最低!
询价
谛辉(北京/上海/青岛 )电子科技有限公司
IRG4PC50FD
IR
25+
TO-3P
18000
原厂直接发货进口原装
询价
深圳市柯尔基电子有限公司
IRG4PC50FD-EPBF
IR/INTERSIL
23+/24+
TO-247
9865
主营IR//英飞凌.终端BOM表可配单
询价
深圳市恒达亿科技有限公司
IRG4PC50FD
IR
25+
TO247
3000
全新原装、诚信经营、公司现货销售
询价
深圳市一线半导体有限公司
IRG4PC50FD
IR
24+
TO-247AC
8866
询价
深圳市福田区绿盛电子商行
IRG4PC50FD-EPBF
IR
2018+
26976
代理原装现货/特价热卖!
询价

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