IRG4PC50FDPBF价格

参考价格:¥10.0283

型号:IRG4PC50FDPBF 品牌:INTERNATIONAL 备注:这里有IRG4PC50FDPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4PC50FDPBF批发/采购报价,IRG4PC50FDPBF行情走势销售排行榜,IRG4PC50FDPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PC50FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:763.7 Kbytes Page:11 Pages

IRF

IRG4PC50FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:763.7 Kbytes Page:11 Pages

IRF

IRG4PC50FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:762.74 Kbytes Page:11 Pages

IRF

IRG4PC50FDPBF

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 70A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:763.7 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design

IRF

IRG4PC50FDPBF产品属性

  • 类型

    描述

  • 型号

    IRG4PC50FDPBF

  • 功能描述

    IGBT 晶体管 600V FAST 1-8 KHZ COPACK IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-9-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
4456
原装现货,当天可交货,原型号开票
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
IR
24+
TO-247AC
27500
原装正品,价格最低!
INFINEON
24+
n/a
25836
新到现货,只做原装进口
INTERNATIONALRECTIFIER
25+
NA
880000
明嘉莱只做原装正品现货
VISHAY
24+
TO-247
12000
VISHAY专营进口原装现货假一赔十
IR
24+
65230
IR
25+23+
TO247
45649
绝对原装正品现货,全新深圳原装进口现货
IR
2023+
TO-247
16360
全新原装正品,优势价格
IR
24+
TO-247-3
983

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