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IRG4PC50F-EPBF价格
参考价格：￥21.6823
型号：IRG4PC50F-EPBF 品牌：International 备注：这里有IRG4PC50F-EPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC50F-EPBF批发/采购报价，IRG4PC50F-EPBF行情走势销售排行榜，IRG4PC50F-EPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PC50F-EPBF | INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AD package • Lead-Free Benefits • | IRF |   | |
IRG4PC50F-EPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：329.46 Kbytes Page：8 Pages | IRF | | |
IRG4PC50F-EPBF | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 70A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：329.46 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packa | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design | IRF | |
IRG4PC50F-EPBF产品属性
- 类型
描述
- 型号
IRG4PC50F-EPBF
- 功能描述
IGBT 晶体管 600V Fast IGBT GEN 4 1 to 5kHz 1.45V 39A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
100000 |
代理渠道/只做原装/可含税 |
|||
Infineon/英飞凌 |
21+ |
TO-247AC |
6820 |
只做原装,质量保证 |
|||
IR |
24+ |
TO-247-3 |
179 |
||||
IR |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
Infineon/英飞凌 |
23+ |
TO-247AC |
12700 |
买原装认准中赛美 |
|||
INFINEON/英飞凌 |
2022+ |
TO-247AC |
8000 |
只做原装支持实单,有单必成。 |
|||
INFINEON/IR |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
Infineon/英飞凌 |
23+ |
TO-247AC |
6000 |
我们只做原装正品,支持检测。 |
|||
IR |
23+ |
TO247 |
8560 |
受权代理!全新原装现货特价热卖! |
IRG4PC50F-EPBF芯片相关品牌
IRG4PC50F-EPBF规格书下载地址
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- IRFZ48
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- IRFZ45
- IRFZ44Z
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- IRFZ44N
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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