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IRG4PC50F-EPBF价格
参考价格：￥21.6823
型号：IRG4PC50F-EPBF 品牌：International 备注：这里有IRG4PC50F-EPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PC50F-EPBF批发/采购报价，IRG4PC50F-EPBF行情走势销售排行榜，IRG4PC50F-EPBF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PC50F-EPBF | INSULATEDGATEBIPOLARTRANSISTOR Features •Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-247ADpackage •Lead-Free Benefits • | IRF International Rectifier |  |   |
IRG4PC50F-EPBF | INSULATEDGATEBIPOLARTRANSISTOR 文件：329.46 Kbytes Page：8 Pages | IRF International Rectifier | | |
IRG4PC50F-EPBF | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 70A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
INSULATEDGATEBIPOLARTRANSISTOR 文件：329.46 Kbytes Page：8 Pages | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystandard | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-pack | IRF International Rectifier | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign | IRF International Rectifier | | |
IRG4PC50F-EPBF产品属性
- 类型
描述
- 型号
IRG4PC50F-EPBF
- 功能描述
IGBT 晶体管 600V Fast IGBT GEN 4 1 to 5kHz 1.45V 39A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
TO-247AC |
30000 |
原装正品公司现货,假一赔十! |
|||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
100000 |
代理渠道/只做原装/可含税 |
|||
Infineon/英飞凌 |
21+ |
TO-247AC |
6820 |
只做原装,质量保证 |
|||
IR |
24+ |
TO-247-3 |
179 |
||||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
Infineon(英飞凌) |
2447 |
TO-247AC |
105000 |
25个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
Infineon |
24+ |
NA |
3466 |
进口原装正品优势供应 |
|||
Infineon/英飞凌 |
23+ |
TO-247AC |
6000 |
我们只做原装正品,支持检测。 |
|||
IR |
22+ |
TO-247AD |
6000 |
终端可免费供样,支持BOM配单 |
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IRG4PC50F-EPBF规格书下载地址
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属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
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DdatasheetPDF页码索引
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