IRG4BC20KDPBF价格

参考价格:¥7.1342

型号:IRG4BC20KDPBF 品牌:INTERNATIONAL 备注:这里有IRG4BC20KDPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4BC20KDPBF批发/采购报价,IRG4BC20KDPBF行情走势销售排行榜,IRG4BC20KDPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4BC20KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10μs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXF

IRF

IRG4BC20KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAGAST SOFT RECOVERY DIODE

文件:320.69 Kbytes Page:11 Pages

IRF

IRG4BC20KDPBF

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 16A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAGAST SOFT RECOVERY DIODE

文件:320.69 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery

IRF

INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4BC20KDPBF产品属性

  • 类型

    描述

  • 型号

    IRG4BC20KDPBF

  • 功能描述

    IGBT 晶体管 600V UltraFast 8-25kHz

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-10-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
INFINEON/英飞凌
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Infineon/英飞凌
24+
TO-220(TO-220-3)
25000
原装正品,假一赔十!
Infineon/英飞凌
21+
TO-220(TO-220-3)
6820
只做原装,质量保证
IR
24+
TO-220-3
358
IR
17+
TO-220
6200
100%原装正品现货
Infineon Technologies
23+
TO220AB
9000
原装正品,支持实单
Infineon(英飞凌)
2447
TO-220(TO-220-3)
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
Infineon Technologies
23+
原装
8000
只做原装现货

IRG4BC20KDPBF数据表相关新闻