型号 功能描述 生产厂家 企业 LOGO 操作

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery

IRF

INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4BC20FDSTRLP产品属性

  • 类型

    描述

  • 型号

    IRG4BC20FDSTRLP

  • 制造商

    International Rectifier

  • 功能描述

    TRANS IGBT CHIP N-CH 600V 16A 3PIN D2PAK - Tape and Reel

更新时间:2025-10-4 17:10:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
TO-220
159942
明嘉莱只做原装正品现货
INFINEON/英飞凌
24+
TO-220
1479
只做原厂渠道 可追溯货源
IR
24+
TO-220AB
8866
Infineon Technologies
23+
TO220AB
9000
原装正品,支持实单
IR
三年内
1983
只做原装正品
IR
2023+
TO-220AB
50000
原装现货
Infineon Technologies
23+
原装
8000
只做原装现货
Infineon Technologies
23+
原装
7000
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
Infineon
24+
NA
3308
进口原装正品优势供应

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