型号 功能描述 生产厂家 企业 LOGO 操作

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery

IRF

INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4BC20FDPBF-EL产品属性

  • 类型

    描述

  • 型号

    IRG4BC20FDPBF-EL

  • 制造商

    International Rectifier

更新时间:2025-11-22 12:01:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
IR
NEW
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
三年内
1983
只做原装正品
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
Infineon Technologies
23+
原装
8000
只做原装现货
IR
23+
TO-220
50000
全新原装正品现货,支持订货
IR
24+
TO-220AB
8866
IR
2023+
TO-220AB
50000
原装现货
Infineon Technologies
22+
TO220AB
9000
原厂渠道,现货配单
INFINEON/英飞凌
23+/24+
TO-220
9865
原装正品,专业分销IGBT管

IRG4BC20FDPBF-EL芯片相关品牌

IRG4BC20FDPBF-EL数据表相关新闻