Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provid

-60 V P - Channel Enhancement Mode MOSFET

GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON)

-60 V P-Channel Enhancement Mode MOSFET

DESCRIPTION The uses advancedtrench technology to provide excellentRDS(ON) and low gate charge .Thisdevice issuitable for use as a loadswitch or inPWM applications. GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON)

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provid

HEXFET짰 Power MOSFET ( VDSS = -55V , RDS(on) = 0.065廓 , ID = -31A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provid

-60 V P-Channel Enhancement Mode MOSFET

DESCRIPTION The uses advancedtrench technology to provide excellentRDS(ON) and low gate charge .Thisdevice issuitable for use as a loadswitch or inPWM applications. GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON)

-60 V P - Channel Enhancement Mode MOSFET

GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON)

P-Channel Enhancement Mode MOSFET

Features * Vos =-60V,lo =-16A Ros 52mQ @ Vos=-10V (Typ)

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -50A RDS(ON)

Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A)

文件：156.72 Kbytes Page：10 Pages

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Ultra Low On-Resistance

文件：3.86247 Mbytes Page：10 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

HEXFET짰 Power MOSFET

文件：249.71 Kbytes Page：11 Pages

P-Channel 60 V (D-S) MOSFET

文件：1.00738 Mbytes Page：7 Pages

Ultra Low On-Resistance

文件：3.86247 Mbytes Page：10 Pages

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

PISTON SEALS

DESCRIPTION The BECA 530 profile is a double acting composite piston seal composed of a pre-tightened rubber square ring and a specific polyurethane friction ring. APPLICATIONS Agriculture Light and medium-sized industry Machine tools Material handling/Lifting

PISTON SEALS

DESCRIPTION The BECA 530 profile is a double acting composite piston seal composed of a pre-tightened rubber square ring and a specific polyurethane friction ring. APPLICATIONS Agriculture Light and medium-sized industry Machine tools Material handling/Lifting

PISTON SEALS

DESCRIPTION The BECA 530 profile is a double acting composite piston seal composed of a pre-tightened rubber square ring and a specific polyurethane friction ring. APPLICATIONS Agriculture Light and medium-sized industry Machine tools Material handling/Lifting

Intel짰 Solid-State Drive 530 Series (2.5-inch)

文件：481.68 Kbytes Page：27 Pages