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IRFR5305PBF中文资料
IRFR5305PBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR5305)
● Straight Lead (IRFU5305)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRFR5305PBF产品属性
- 类型
描述
- 型号
IRFR5305PBF
- 功能描述
MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
SMD |
618000 |
明嘉莱只做原装正品现货 |
||||
IR |
16+/17+ |
TO-252 |
3500 |
原装正品现货供应56 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
IR |
TO252 |
1000 |
原装长期供货! |
||||
IR |
25+ |
TO263 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
19+ |
TO-252 |
32000 |
原装正品,现货特价 |
IRFR5305PBF 价格
参考价格：￥1.3797
IRFR5305PBF 资料下载更多...
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