Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provid

-60 V P - Channel Enhancement Mode MOSFET

GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON)

-60 V P-Channel Enhancement Mode MOSFET

DESCRIPTION The uses advancedtrench technology to provide excellentRDS(ON) and low gate charge .Thisdevice issuitable for use as a loadswitch or inPWM applications. GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON)

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A)

文件：156.72 Kbytes Page：10 Pages

HEXFET짰 Power MOSFET ( VDSS = -55V , RDS(on) = 0.065廓 , ID = -31A )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provid

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provid

P-Channel Enhancement Mode MOSFET

Features * Vos =-60V,lo =-16A Ros 52mQ @ Vos=-10V (Typ)

-60 V P-Channel Enhancement Mode MOSFET

DESCRIPTION The uses advancedtrench technology to provide excellentRDS(ON) and low gate charge .Thisdevice issuitable for use as a loadswitch or inPWM applications. GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON)

-60 V P - Channel Enhancement Mode MOSFET

GENERAL FEATURES VDS =- 60V,ID =-30A RDS(ON)

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -50A RDS(ON)

Ultra Low On-Resistance

文件：3.86247 Mbytes Page：10 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：249.71 Kbytes Page：11 Pages

P-Channel 60 V (D-S) MOSFET

文件：1.00738 Mbytes Page：7 Pages

Ultra Low On-Resistance

文件：3.86247 Mbytes Page：10 Pages

HEXFET짰 Power MOSFET

文件：249.71 Kbytes Page：11 Pages

T-1 3/4 Tricolor Right Angle LED Assembly

Features • Block mounting, height and spacing alignment saves assembly cost and time. • Super Brite LEDs-high intensity light output • Press-in pin secures block to board for soldering. • Press-in pin secures block to board for soldering. • Standoffs prevent flux entrapment.

BNC (Female) To SMD Grabber Test Clips

FEATURES: • Converts BNC (male) cables / connectors to SMD test clips for test versatility. • Grabber pincer and BNC center contact are gold plated excellent corrosion resistance and low contact resistance to ensure test signal integrity. • BNC connector is molded directly to the wire for pull

T-1 3/4 Tricolor Right Angle LED Assembly

Features • Block mounting, height and spacing alignment saves assembly cost and time. • Super Brite LEDs-high intensity light output • Press-in pin secures block to board for solder • Press-in pin secures block to board for soldering.ing. • Standoffs prevent flux entrapment.

Rod, Expanding/Cross-Plate Anchor, 1/2in X 5ft Thimbleye

文件：366.84 Kbytes Page：1 Pages

24 (7/32) AWG Tinned Copper

文件：413.16 Kbytes Page：4 Pages