N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

N 沟道增强型场效应晶体管 60V，2.7A，0.2Ω

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performan

N 沟道逻辑电平增强型场效应晶体管，60V，2.8A，160mΩ

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STATIC SEALS

DESCRIPTION The BECA 014 profile is a polyurethane static seal. It provides an alternative solution to combining an O'Ring (possible twisting during fitting) with a back-up ring (positioning is not always optimal). APPLICATIONS Mobile hydraulics Injection presses Presses Standard cy

3-Cup Anemometer

Benefits and Features Ideal for applications that do not require wind direction measurements Sealed magnetic reed switch Designed for continuous, long term, unattended operation in adverse conditions Standard aluminum cup assembly has a distance constant of less than 4.5 m For greater se

Field replaceable bearings and electronics

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Aluminum or Lexan cups available

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EFD20 HIGH FREQUENCY PoE TRANSFORMER

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