General Description

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V.

■ High density cell design for extremely low RDS(ON).

■ High power and current handling capability in a widely used surface mount package.